Datasheet > MDP9N60TH

MDP9N60TH

更新时间： 2024-09-14 01:18:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	991K
描述
N-Channel MOSFET 600V, 9A, 0.75(ohm)

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MDP9N60TH 数据手册

MDP9N60

N-Channel MOSFET 600V, 9A, 0.75Ω

General Description

Features

The MDP9N60 uses advanced MagnaChip’s MOSFET

Technology, which provides low on-state resistance, high

switching performance and excellent quality.



V_DS= 600V

V_DS= 660V

I_D=9.0A

@ V_GS= 10V

R_DS(ON)≤ 0.75Ω

MDP9N60 is suitable device for SMPS, high Speed switching

and general purpose applications.

Applications



Power Supply

PFC

High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

600

660

±30

9.0

Unit

Drain-Source Voltage @ Tjmax

Gate-Source Voltage

V_DSS@ T_jmax

V_GSS

T_C=25^oC

T_C=100^oC

Continuous Drain Current (※)

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

5.7

I_DM

P_D

T_C=25^oC

150

1.2

W/ ^oC

Derate above 25 ^oC

(1)

Repetitive Avalanche Energy E_AR

E_AR

Dv/dt

E_AS

V/ns

Peak Diode Recovery dv/dt⁽³⁾

4.5

Single Pulse Avalanche Energy⁽⁴⁾

480

-55~150

Junction and Storage Temperature Range

※ Id limited by maximum junction temperature

T_J, T_stg

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

0.83

Dec. 2014 Version 2.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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