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MDF8N60B PDF预览

MDF8N60B

更新时间: 2024-11-30 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 840K
描述
N-Channel MOSFET 600V, 8A, 1.05(ohm)

MDF8N60B 数据手册

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MDF8N60B  
NꢁChannelꢀMOSFETꢀ600V,ꢀ8A,ꢀ1.05  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theseꢀ Nꢁchannelꢀ MOSFETꢀ areꢀ producedꢀ usingꢀ advancedꢀ  
MagnaChip’sꢀ MOSFETꢀ Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁ  
stateꢀ resistance,ꢀ highꢀ switchingꢀ performanceꢀ andꢀ excellentꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ600Vꢀ  
IDꢀ=ꢀ8.0Aꢀ ꢀ  
RDS(ON)ꢀ≤ꢀ1.05ꢂꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
quality.ꢀ  
Applicationsꢀ  
Theseꢀ devicesꢀ areꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ  
switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀ  
ꢀ  
ꢀ  
PowerꢀSupplyꢀ  
PFCꢀ  
HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ  
Gꢀ  
Dꢀ  
Sꢀ  
ꢀ ꢀ ꢀ ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
Ratingꢀ  
600ꢀ  
Unitꢀ  
DrainꢁSourceꢀVoltageꢀ  
VDSS  
Vꢀ  
Vꢀ  
Aꢀ  
Aꢀ  
Aꢀ  
GateꢁSourceꢀVoltageꢀ  
VGSS  
±30ꢀ  
ꢀ TC=25oCꢀ  
8.0*ꢀ  
4.9*ꢀ  
32*ꢀ  
ꢀ ContinuousꢀDrainꢀCurrent()ꢀ  
IDꢀ  
ꢀ TC=100oCꢀ  
ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ PowerꢀDissipationꢀ  
IDM  
ꢀ TC=25oCꢀ  
46ꢀ  
Wꢀ  
PDꢀ  
W/ oCꢀ  
Derateꢀaboveꢀ25 oCꢀ  
0.37ꢀ  
4.6ꢀ  
RepetitiveꢀAvalancheꢀEnergy(1)ꢀ ꢀ  
PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
SingleꢀPulseꢀAvalancheꢀEnergy(4)  
EAR  
dv/dtꢀ  
EAS  
TJ,ꢀTstg  
mJꢀ  
V/nsꢀ  
mJꢀ  
oC  
4.5ꢀ  
320ꢀ  
ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
ꢁ55~150  
ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
62.5ꢀ  
Unitꢀ  
oC/Wꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
2.71ꢀ  
1
Jan.ꢀ2012ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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