Novꢀ2009.ꢀVersionꢀ2.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
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ꢀ MDF9N60ꢀꢀ
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ꢀ NꢁChannelꢀMOSFETꢀ600V,ꢀ9A,ꢀ0.75Ωꢀ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
Theꢀ MDF9N60ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ
Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁstateꢀ resistance,ꢀ highꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
VDSꢀ=ꢀ600Vꢀ
VDSꢀ=ꢀ660Vꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ @ꢀTjmax
ꢀ
switchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ
ꢀ
IDꢀ=ꢀ9.0Aꢀ ꢀ
@ꢀVGSꢀ=ꢀ10Vꢀ
@ꢀVGSꢀ=ꢀ10Vꢀ
RDS(ON)ꢀ≤ꢀ0.75ꢂꢀ
MDF9N60ꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀhighꢀSpeedꢀswitchingꢀ
Applicationsꢀ
ꢀ
andꢀgeneralꢀpurposeꢀapplications.ꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
PowerꢀSupplyꢀ
PFCꢀ
HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ
ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Gꢀ
Dꢀ
Sꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
VDSS
VDSSꢀ@ꢀTjmax
VGSS
Ratingꢀ
600ꢀ
660ꢀ
±30ꢀ
9.0ꢀ
Unitꢀ
Vꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
ꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ@ꢀTjmaxꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
ꢀ
Vꢀ
ꢀ
Vꢀ
ꢀ TC=25oCꢀ
Aꢀ
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ(※)ꢀ
IDꢀ
IDM
PDꢀ
ꢀ TC=100oCꢀ
5.7ꢀ
Aꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
ꢀ
32ꢀ
Aꢀ
ꢀ TC=25oCꢀ
48ꢀ
Wꢀ
W/ oCꢀ
Derateꢀaboveꢀ25 oCꢀ
0.38ꢀ
4.8ꢀ
ꢀ ꢀ RepetitiveꢀAvalancheꢀEnergyꢀEAR(1)ꢀ
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)
EARꢀ ꢀ
mJꢀ
V/nsꢀ
mJꢀ
oC
ꢀ
Dv/dtꢀ
4.5ꢀ
ꢀ
EAS
ꢀ
480ꢀ
ꢁ55~150ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)
Symbolꢀ
RθJA
RθJC
Ratingꢀ
62.5ꢀ
Unitꢀ
ꢀ
ꢀ
oC/Wꢀ
ꢀ
ꢀ
2.62ꢀ
ꢀ ꢀ ꢀ ꢀ
1ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.