Datasheet > MDF9N50FTH

MDF9N50FTH

更新时间： 2024-11-30 17:15:15

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1102K
描述
TO-220F

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中文翻译

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数据手册

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MDF9N50FTH 数据手册

MDF9N50F

N-Channel MOSFET 500V, 8.0 A, 0.9Ω

General Description

Features

The MDF9N50F uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 500V

 I_D= 8.0A @V_GS= 10V

 R_DS(ON)≤ 0.9Ω @V_GS= 10V

Applications

MDF9N50F is suitable device for SMPS, HID and

general purpose applications.

 Power Supply

 HID

 Lighting

Absolute Maximum Ratings (T_a= 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

500

±30

8.0

Unit

Gate-Source Voltage

V_GSS

T_C=25^oC

Continuous Drain Current

I_D

T_C=100^oC

4.8

Pulsed Drain Current⁽¹⁾

I_DM

P_D

T_C=25^oC

Power Dissipation

Derate above 25 ^oC

0.3

W/ ^oC

V/ns

^oC

Peak Diode Recovery dv/dt⁽³⁾

Dv/dt

E_AS

4.5

Single Pulse Avalanche Energy⁽⁴⁾

300

-55~150

Junction and Storage Temperature Range

T_J, T_stg

※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

62.5

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

^oC/W

R_θJC

3.3

Aug. 2021. Version 1.1

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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