MDF3752
P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ
Features
General Description
VDS = -40V
ID = -36.5A @VGS = -10V
RDS(ON)
The MDF3752 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
< 17mΩ @ VGS = -10V
< 25mΩ @ VGS = -4.5V
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
Applications
Inverters
General purpose applications
G
G
D
S
S
Absolute Maximum Ratings (TC =25o)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
-40
Unit
V
Gate-Source Voltage
VGSS
±20
V
TC=25oC
TC=100oC
-36.5
-23.1
-90
A
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 1)
ID
A
IDM
PD
A
TC=25oC
TC=100oC
(Note 2)
35.7
W
14.3
Single Pulse Avalanche Energy
EAS
128
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~+150
Thermal Characteristics
Characteristics
Symbol
RθJA
Rating
62.5
Unit
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
oC/W
RθJC
3.5
1
April 2015. Version 1.1
MagnaChip Semiconductor Ltd.