Datasheet > MDF3752TH

MDF3752TH

更新时间： 2024-11-22 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1058K
描述
P-Channel Trench MOSFET, -40V, -36.5A, 17m(ohm)

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MDF3752TH 数据手册

MDF3752

P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ

Features

General Description



V_DS= -40V

I_D= -36.5A @V_GS= -10V

R_DS(ON)

The MDF3752 uses advanced MagnaChip’s Trench

MOSFET Technology to provided high performance in on-

state resistance, switching performance and reliability.

< 17mΩ @ V_GS= -10V

< 25mΩ @ V_GS= -4.5V

Low R_DS(ON), Low Gate Charge can be offering superior

benefit in the application.

Applications



Inverters

General purpose applications

Absolute Maximum Ratings (T_C=25^o)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

-40

Unit

Gate-Source Voltage

V_GSS

±20

T_C=25^oC

T_C=100^oC

-36.5

-23.1

-90

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

(Note 1)

I_D

I_DM

P_D

T_C=25^oC

T_C=100^oC

(Note 2)

35.7

14.3

Single Pulse Avalanche Energy

E_AS

128

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~+150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

62.5

Unit

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

^oC/W

R_θJC

3.5

April 2015. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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