Datasheet > MDF3N50TH

MDF3N50TH

更新时间： 2024-11-19 17:15:23

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美格纳 - MGCHIP		/
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描述
TO-220F

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MDF3N50TH 数据手册

MDF3N50

N-Channel MOSFET 500V, 2.8 A, 2.5Ω

General Description

Features

The MDF3N50 uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.



V_DS= 500V

I_D= 2.8A

R_DS(ON)≤ 2.5Ω

@ V_GS= 10V

MDF3N50 is suitable device for SMPS, HID and

general purpose applications.

Applications



Power Supply

HID

High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

V_DSS

Rating

Unit

Drain-Source Voltage

500

±30

Gate-Source Voltage

V_GSS

T_C=25^oC

2.8

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

1.7

I_DM

P_D

11.2

30.5

0.24

4.5

T_C=25^oC

Derate above 25 ^oC

W/ ^oC

Peak Diode Recovery dv/dt⁽³⁾

dv/dt

E_AR

V/ns

^oC

Repetitive Pulse Avalanche Energy⁽⁴⁾

Single Pulse Avalanche Energy⁽⁴⁾

Junction and Storage Temperature Range

4.5

E_AS

170

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

R_θJA

R_θJC

62.5

4.1

^oC/W

Thermal Resistance, Junction-to-Case⁽¹⁾

Aug. 2021. Version 1.1

Magnachip Semiconductor Ltd.

12 3 4 5 6

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