Datasheet > MDF5N50F

MDF5N50F

更新时间： 2024-11-22 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	1459K
描述
N-Channel MOSFET 500V, 4.5 A, 1.58ohm

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MDF5N50F 数据手册

MDP5N50F / MDF5N50F

N-Channel MOSFET 500V, 4.5 A, 1.58Ω

General Description

Features

The MDP5N50F/MDF5N50F use advanced Magnachip’s

 V_DS= 500V

MOSFET Technology, which provides low on-state resistance,

high switching performance and excellent quality.

 I_D= 4.5A

 R_DS(ON)≤ 1.58Ω @V_GS= 10V

@V_GS= 10V

MDP5N50F/MDF5N50F are suitable device for SMPS, HID

and general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

TO-220

TO-220F

MDP Series

MDF Series

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

V_DSS

MDP5N50F

500

MDF5N50F

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

4.5

2.8

4.5*

2.8*

18*

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

I_DM

P_D

T_C=25^oC

W/ ^oC

Derate above 25 ^oC

0.74

0.22

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

4.5

230

V/ns

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

MDP5N50F

MDF5N50F

62.5

Unit

R_θJA

R_θJC

62.5

1.35

^oC/W

4.6

Jun. 2018 Version 1.3

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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