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MDF5N50TH PDF预览

MDF5N50TH

更新时间: 2024-11-22 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 1012K
描述
N-Channel MOSFET 500V, 5.0 A, 1.4(ohm)

MDF5N50TH 数据手册

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MDF5N50  
N-Channel MOSFET 500V, 5.0 A, 1.4  
General Description  
Features  
The MDF5N50 uses advanced MagnaChip’s MOSFET  
Technology, which provides low on-state resistance, high  
switching performance and excellent quality.  
VDS = 500V  
ID = 5.0A  
RDS(ON) 1.4Ω  
@ VGS = 10V  
@ VGS = 10V  
MDF5N50 is suitable device for SMPS, high Speed switching  
and general purpose applications.  
Applications  
Power Supply  
PFC  
Ballast  
G
D
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Symbol  
VDSS  
Rating  
500  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
±30  
V
TC=25oC  
TC=100oC  
5.0  
A
Continuous Drain Current ()  
Pulsed Drain Current(1)  
Power Dissipation  
ID  
3.2  
A
IDM  
PD  
20  
A
TC=25oC  
27  
W
W/ oC  
Derate above 25 oC  
0.22  
4.5  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
Dv/dt  
EAS  
V/ns  
mJ  
230  
Junction and Storage Temperature Range  
Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient(1)  
Symbol  
RθJA  
Rating  
62.5  
Unit  
oC/W  
Thermal Resistance, Junction-to-Case(1)  
RθJC  
4.6  
1
Oct 2014. Version 1.3  
MagnaChip Semiconductor Ltd.  

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