Datasheet > MD06D2K2UK-AH

MD06D2K2UK-AH

更新时间： 2024-09-20 14:55:19

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	454K
描述
小信号金氧半電晶體

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MD06D2K2UK-AH 数据手册

MD06D2K2UK-AH

Dual N-Channel Enhancement Mode MOSFET

Features

• AEC-Q101 Qualified

• High speed switch

• Advanced trench cell design

• Built-in G-S Protection Diode

• Halogen and Antimony Free(HAF),

RoHS compliant

• Typical ESD Protection HBM Class 2

Q1: 1. Source 2. Gate 6. Drain

Q2: 4. Source 5. Gate 3. Drain

SOT-26 Plastic Package

Classification Voltage Range(V)

< 125

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Applications

• Portable appliances

• Load switch appliances

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)(Q1/Q2)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

± 20

350

℃

Peak Drain Current, Pulsed ¹⁾

Power Dissipation ²⁾

I_DM

1000

P_D

500

Operating Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

℃

Thermal Characteristics(Q1/Q2)

Parameter

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

Symbol

R_θJA

Max.

250

Unit

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 6

Dated: 22/02/2023 Rev:02

12 3 4 5 6

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