Semiconductor
MCTV35P60F1D
35A, 600V P-Type MOS Controlled
Thyristor (MCT) with Anti-Parallel Diode
April 1999
Features
Package
• 35A, -600V
JEDEC STYLE TO-247
• VTM = -1.35V (Max) at I = 35A and +150oC
• 800A Surge Current Capability
• 800A/µs di/dt Capability
A
A
K
GR
G
• MOS Insulated Gate Control
• 50A Gate Turn-Off Capability at +150oC
• Anti-Parallel Diode
Description
The MCT is an MOS Controlled Thyristor designed for switch-
ing currents on and off by negative and positive pulsed control
of an insulated MOS gate. It is designed for use in motor con-
trols, inverters, line switches and other power switching appli-
cations. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like
forward drop greatly reduces conduction power loss.
Symbol
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150oC with active switching.
This device features a discrete anti-parallel diode that shunts
current around the MCT in the reverse direction without
introducing carriers into the depletion region.
G
A
K
PART NUMBER INFORMATION
PART NUMBER
PACKAGE
TO-247
BRAND
MCTV35P60F1D
M35P60F1D
NOTE: When ordering, use the entire part number.
Formerly developmental type TA9789 (MCT) and TA49054
(diode).
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
MCTV35P60F1D
UNITS
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM
Continuous Cathode Current (See Figure 2)
-600
V
o
TC = +25 C (Package Limited). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK25
60
35
A
A
o
TC = +90 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK115
Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKSM
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKC
Gate-Anode Voltage (Continuous). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA1
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGAM
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
800
50
A
A
V
V
±20
±25
See Figure 11
800
A/µs
178
W
o
1.43
W/ C
o
-55 to +150
260
C
o
C
(0.063" (1.6mm) from case for 10s)
o
o
NOTE: 1. Maximum Pulse Width of 250µs (Half Sine) Assume T (Initial) = +90 C and T (Final) = T (Max) = +150 C
J
J
J
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 3694.4
Copyright © Harris Corporation 1999
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