Datasheet > MCTV75P60E1

MCTV75P60E1

更新时间： 2024-11-16 22:28:51

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	53K
描述
75A, 600V P-Type MOS Controlled Thyristor (MCT)

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MCTV75P60E1 数据手册

MCTV75P60E1,

MCTA75P60E1

Semiconductor

75A, 600V

P-Type MOS Controlled Thyristor (MCT)

April 1999

Features

Package

JEDEC STYLE TO-247 5-LEAD

• 75A, -600V

ANODE

• V_TM= -1.3V(Maximum) at I = 75A and +150^oC

• 2000A Surge Current Capability

• 2000A/µs di/dt Capability

CATHODE

GATE RETURN

GATE

• MOS Insulated Gate Control

• 120A Gate Turn-Off Capability at +150^oC

Description

JEDEC MO-093AA (5-LEAD TO-218)

The MCT is an MOS Controlled Thyristor designed for switching

currents on and off by negative and positive pulsed control of an

insulated MOS gate. It is designed for use in motor controls,

inverters, line switches and other power switching applications.

ANODE

CATHODE

GATE RETURN

GATE

The MCT is especially suited for resonant (zero voltage or

zero current switching) applications. The SCR like forward

drop greatly reduces conduction power loss.

MCTs allow the control of high power circuits with very small

amounts of input energy. They feature the high peak current

capability common to SCR type thyristors, and operate at

junction temperatures up to +150^oC with active switching.

Symbol

PART NUMBER INFORMATION

PART NUMBER

MCTV75P60E1

MCTA75P60E1

PACKAGE

TO-247

MO-093AA

BRAND

MV75P60E1

MA75P60E1

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings T = +25 C, Unless Otherwise Speciﬁed

MCTV75P60E1

MCTA75P60E1

UNITS

Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DRM

Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RRM

Continuous Cathode Current (See Figure 2)

-600

T_C= +25 C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_K25

T_C= +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_K90

Non-Repetitive Peak Cathode Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_KSM

Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_KC

Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GA

Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GAM

Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt

Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG

2000

120

±20

±25

See Figure 11

2000

A/µs

208

1.67

W/ C

-55 to +150

260

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L

(0.063" (1.6mm) from case for 10s)

NOTE:

1. Maximum Pulse Width of 250µs (Half Sine) Assume T (Initial) = +90 C and T (Final) = T (Max) = +150 C

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 3374.6

2-18

12 3 4 5

中文翻译

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MCTV75P60E1 替代型号

型号	品牌	替代类型	描述	数据表
MCTV65P100F1	INTERSIL	功能相似	65A, 1000V P-Type MOS Controlled Thyristor (MCT)

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