MCU011N10YL
Features
•
•
•
•
•
•
Split Gate Trench MOSFET Tenchnology
High Density Cell Design For Ultra Low RDS(on)
Moisture Sensitivity Level 1
Halogen Free."Green"Device(Note1)
N-CHANNEL
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
MOSFET
Maximum Ratings
•
•
•
•
Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
Thermal Resistance: 50°C/W Junction to Ambient(Note2)
Thermal Resistance: 1.8°C/W Junction to Case
DPAK(TO-252)
Parameter
Rating
100
±20
55
Symbol
VDS
Unit
V
J
Drain-Source Voltage
Gate-Source Volltage
H
VGS
1
V
C
I
O
F
4
2
3
E
TC=25°C
Continuous Drain Current
ID
A
TC=100°C
38
M
V
K
Q
Pulsed Drain Current(Note3)
IDM
PD
220
83
A
W
A
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G
L
D
B
Single Pulse Avalanche Energy (Note 5)
EAS
77
mJ
1RWHꢄ
1. Gate
2,4. Drain
3. Source
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DIMENSIONS
MM
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INCHES
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DIM
NOTE
MIN MAX MIN MAX
0.087 0.094 2.20 2.40
0.000 0.005 0.00 0.13
0.026 0.034 0.66 0.86
0.018 0.023 0.46 0.58
0.256 0.264 6.50 6.70
0.201 0.215 5.10 5.46
A
B
C
D
E
F
G
H
I
Internal Structure and Marking Code
0.190
4.83
TYP.
0.236 0.244 6.00 6.20
0.086 0.094 2.18 2.39
0.386 0.409 9.80 10.40
D
J
0.114
0.055 0.067 1.40 1.70
0.063 1.60
2.90
TYP.
TYP.
K
L
M
O
Q
V
MCC
MCU011N10YL
G
0.043 0.051 1.10 1.30
0.000 0.012 0.00 0.30
0.211
5.35
TYP.
S
Rev.4-1-01092024
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