Datasheet > MCU011N10YL

MCU011N10YL

更新时间： 2024-04-09 19:00:11

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	953K
描述
Tape:2.5K/Reel,25K/Ctn;

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数据手册

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MCU011N10YL 数据手册

MCU011N10YL

Features

•

Split Gate Trench MOSFET Tenchnology

High Density Cell Design For Ultra Low R_DS(on)

Moisture Sensitivity Level 1

Halogen Free."Green"Device^(Note1)

N-CHANNEL

Epoxy Meets UL 94 V-0 Flammability Rating

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

MOSFET

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +175°C

Storage Temperature Range: -55°C to +175°C

Thermal Resistance: 50°C/W Junction to Ambient^(Note2)

Thermal Resistance: 1.8°C/W Junction to Case

DPAK(TO-252)

Parameter

Rating

100

±20

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

T_C=25°C

Continuous Drain Current

I_D

T_C=100°C

Pulsed Drain Current^（Note3）

I_DM

P_D

220

7RWDOꢀ3RZHUꢀ'LVVLSDWLRQ^{ꢁNoteꢂꢃ}

Single Pulse Avalanche Energy ^{(Note 5)}

E_AS

1RWHꢄ

1. Gate

2,4. Drain

3. Source

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ꢈꢉꢊꢊSSPꢀFKORULQHꢀꢁꢈꢅꢌꢊꢊSSPꢀWRWDOꢀ%Uꢀꢍꢀ&OꢃꢀDQGꢀꢈꢅꢊꢊꢊSSPꢀDQWLPRQ\ꢀFRPSRXQGVꢆ

ꢎꢆ 7KHꢀYDOXHꢀRIꢀ5_ș-$ꢀLVꢀPHDVXUHGꢀZLWKꢀWKHꢀGHYLFHꢀPRXQWHGꢀRQꢀꢅLQ^ꢎꢀ)5ꢏꢂꢀERDUGꢀZLWKꢀꢎR]ꢆ

DIMENSIONS

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INCHES

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ꢂꢆ 3_'ꢀLVꢀEDVHGꢀRQꢀPD[ꢆꢀMXQFWLRQꢀWHPSHUDWXUHꢋꢀXVLQJꢀMXQFWLRQꢏFDVHꢀWKHUPDOꢀUHVLVWDQFHꢆ

ꢌꢆ 7_- ꢎꢌǔꢋꢀ9_'' 509ꢋꢀV_GS=10V, R_* 25Ωꢋꢀ/ 0.5P+.

DIM

NOTE

MIN MAX MIN MAX

0.087 0.094 2.20 2.40

0.000 0.005 0.00 0.13

0.026 0.034 0.66 0.86

0.018 0.023 0.46 0.58

0.256 0.264 6.50 6.70

0.201 0.215 5.10 5.46

Internal Structure and Marking Code

0.190

4.83

TYP.

0.236 0.244 6.00 6.20

0.086 0.094 2.18 2.39

0.386 0.409 9.80 10.40

0.114

0.055 0.067 1.40 1.70

0.063 1.60

2.90

TYP.

MCC

MCU011N10YL

0.043 0.051 1.10 1.30

0.000 0.012 0.00 0.30

0.211

5.35

TYP.

Rev.4-1-01092024

1/6

MCCSEMI.COM

12 3 4 5 6

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