MCU029N10YLHE3
Features
•
•
•
•
•
•
•
AEC-Q101 Qualified
Split Gate Trench MOSFET Technology
High Density Cell Design For Ultra Low R
Moisture Sensitivity Level 1
Halogen Free."Green"Device(Note1)
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
DS(on)
N-CHANNEL
MOSFET
Maximum Ratings
•
•
•
•
Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
DPAK(TO-252)
Thermal Resistance: 50°C/W Junction to Ambient(Note2)
Thermal Resistance: 2.8°C/W Junction to Case
J
H
Parameter
Rating
100
Symbol
VDS
Unit
V
1
2
3
C
I
O
Drain-Source Voltage
Gate-Source Volltage
F
4
E
VGS
±20
V
M
TC=25°C
27
19
V
K
Q
ID
Continuous Drain Current
Pulsed Drain Current(Note 3)
A
TC=100°C
A
G
IDM
PD
108
53
A
W
L
D
B
Total Power Dissipation(Note 4)
1. Gate
2,4. Drain
3. Source
Single Pulsed Avalanche Energy(Note 5)
EAS
mJ
25
Note:
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
DIMENSIONS
MM
INCHES
DIM
NOTE
MIN MAX MIN MAX
0.087 0.094 2.20 2.40
0.000 0.005 0.00 0.13
0.026 0.034 0.66 0.86
0.018 0.023 0.46 0.58
0.256 0.264 6.50 6.70
0.201 0.215 5.10 5.46
A
B
C
D
E
F
G
H
I
3. Repetitive rating; pulse width limited by max. junction temperature.
4. PD is based on max. junction temperature, using junction-case thermal resistance.
5. TJ=25℃, VDD=80V, VGS=10V, Rg=25Ω,L=0.5mH.
0.190
4.83
TYP.
0.236 0.244 6.00 6.20
0.086 0.094 2.18 2.39
0.386 0.409 9.80 10.40
Internal Structure and Marking Code
J
TYP.
TYP.
0.114
0.055 0.067 1.40 1.70
0.063
0.043 0.051 1.10 1.30
0.000 0.012 0.00 0.30
2.90
K
L
M
O
Q
V
'
1.60
MCC
MCU029N10YL
4 codes in total
YY is the year
WW is the week
YYWW
0.211
5.35
TYP.
*
6
Rev.4-1-03112024
1/6
MCCSEMI.COM