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MCR8SM

更新时间： 2024-11-18 20:25:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 65K
描述
8A, 600V, SCR, TO-220AB, CASE 221A, 3 PIN

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中文翻译

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MCR8SM 技术参数

生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.05Is Samacsys：N
其他特性：SENSITIVE GATE外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：2 V/us
最大直流栅极触发电流：0.2 mA最大直流栅极触发电压：1 V
最大维持电流：6 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
最大漏电流：0.5 mA通态非重复峰值电流：90 A
元件数量：1端子数量：3
最大通态电压：1.8 V最大通态电流：8000 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大均方根通态电流：8 A重复峰值关态漏电流最大值：10 µA
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE触发设备类型：SCR
Base Number Matches：1

MCR8SM 数据手册

 浏览型号MCR8SM的Datasheet PDF文件第2页浏览型号MCR8SM的Datasheet PDF文件第3页浏览型号MCR8SM的Datasheet PDF文件第4页 
Preferred Device  
Reverse Blocking Thyristors  
http://onsemi.com  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half–wave, silicon gate–controlled devices are needed.  
• Sensitive Gate Allows Triggering by Microcontrollers and other  
Logic Circuits  
SCRs  
8 AMPERES RMS  
400 thru 800 VOLTS  
• Blocking Voltage to 800 Volts  
G
• On–State Current Rating of 8 Amperes RMS at 80°C  
• High Surge Current Capability — 80 Amperes  
• Rugged, Economical TO220AB Package  
A
K
• Glass Passivated Junctions for Reliability and Uniformity  
• Minimum and Maximum Values of IGT, VGT and IH Specified for  
Ease of Design  
4
• Immunity to dv/dt — 5 V/µsec Minimum at 110°C  
• Device Marking: Logo, Device Type, e.g., MCRSD, Date Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Rating  
Symbol  
Value  
Unit  
2
3
(1)  
Peak Repetitive Off–State Voltage  
(T = –40 to 110°C, Sine Wave,  
J
V
Volts  
DRM,  
TO–220AB  
CASE 221A  
STYLE 3  
V
RRM  
50 to 60 Hz, Gate Open)  
400  
600  
800  
MCR8SD  
MCR8SM  
MCR8SN  
PIN ASSIGNMENT  
Cathode  
On-State RMS Current  
(180° Conduction Angles; T = 80°C)  
I
8.0  
Amps  
Amps  
1
2
3
4
T(RMS)  
C
Anode  
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz,  
T = 110°C)  
J
I
TSM  
80  
Gate  
Anode  
2
2
Circuit Fusing Consideration  
(t = 8.33 ms)  
I t  
26.5  
5.0  
0.5  
2.0  
A sec  
ORDERING INFORMATION  
Forward Peak Gate Power  
P
Watts  
Watt  
GM  
Device  
MCR8SD  
MCR8SM  
MCR8SN  
Package  
TO220AB  
TO220AB  
TO220AB  
Shipping  
(Pulse Width ≤ 1.0 µs, T = 80°C)  
C
Forward Average Gate Power  
P
50 Units/Rail  
50 Units/Rail  
50 Units/Rail  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Forward Peak Gate Current  
I
Amps  
GM  
(Pulse Width ≤ 1.0 µs, T = 80°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to 110  
–40 to 150  
°C  
°C  
J
Preferred devices are recommended choices for future use  
and best overall value.  
T
stg  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage  
ratings of the devices are exceeded.  
Semiconductor Components Industries, LLC, 1999  
514  
Publication Order Number:  
March, 2000 – Rev. 1  
MCR8S/D  
1234

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与MCR8SM相关器件

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MCR8SM-AF MOTOROLA

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 		暂无描述
MCR8SM-AJ MOTOROLA

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 		8A, 600V, SCR, TO-220AB
MCR8SM-AN MOTOROLA

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 		暂无描述
MCR8SM-AU MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BA MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BC MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BG MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BL MOTOROLA

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 		8A, 600V, SCR, TO-220AB
MCR8SM-BS MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220, 2 P
MCR8SM-BU MOTOROLA

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 		8A, 600V, SCR, TO-220AB, TO-220, 2 PIN

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