MCR8SM-AN

更新时间： 2024-11-18 13:11:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅
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MCR8SM-AN 数据手册

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by MCR8/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

SCRs

8 AMPERES RMS

400 thru 800

VOLTS

Designed primarily for half–wave ac control applications, such as motor

controls, heating controls, and power supplies; or wherever half–wave, silicon

gate–controlled devices are needed.

•

Blocking Voltage to 800 Volts

On-State Current Rating of 8 Amperes RMS

High Surge Current Capability — 80 Amperes

Industry Standard TO–220AB Package for Ease of Design

Glass Passivated Junctions for Reliability and Uniformity

CASE 221A–06

(TO-220AB)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (1)

Peak Repetitive Reverse Voltage

DRM

RRM

Volts

(T = –40 to 125°C)

MCR8D

MCR8M

MCR8N

400

600

800

On-State RMS Current

(All Conduction Angles)

T(RMS)

Peak Non-repetitive Surge Current

(One Half Cycle, 60 Hz, T = 125°C)

TSM

Circuit Fusing Consideration (t = 8.3 ms)

I t

26.5

5.0

A sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

Average Gate Power (t = 8.3 ms, T = 80°C)

0.5

G(AV)

Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)

2.0

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.0

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

NOTE: V andV

260

foralltypescanbeappliedonacontinuousbasis.Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall

RRM

DRM

notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthat

the voltage ratings of the devices are exceeded.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Thyristor Device Data

Motorola, Inc. 1995

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与MCR8SM-AN相关器件

型号	品牌	获取价格	描述	数据表
MCR8SM-AU	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BA	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BC	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BG	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8SM-BL	MOTOROLA	获取价格	8A, 600V, SCR, TO-220AB
MCR8SM-BS	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220, 2 P
MCR8SM-BU	MOTOROLA	获取价格	8A, 600V, SCR, TO-220AB, TO-220, 2 PIN
MCR8SM-BV	MOTOROLA	获取价格	8A, 600V, SCR, TO-220AB, TO-220, 3 PIN
MCR8SM-DW	MOTOROLA	获取价格	8A, 600V, SCR, TO-220AB
MCR8SMG	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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