MCR8SN-BG

更新时间： 2024-11-18 13:01:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅
页数	文件大小	规格书
2页	69K
描述
Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB

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MCR8SN-BG 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.61	Is Samacsys：	N
外壳连接：	ANODE	配置：	SINGLE
关态电压最小值的临界上升速率：	2 V/us	最大直流栅极触发电流：	0.2 mA
最大直流栅极触发电压：	1 V	最大维持电流：	6 mA
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	110 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
最大均方根通态电流：	8 A	重复峰值关态漏电流最大值：	10 µA
断态重复峰值电压：	800 V	重复峰值反向电压：	800 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	SCR
Base Number Matches：	1

MCR8SN-BG 数据手册

Order this document

by MCR8/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

SCRs

8 AMPERES RMS

400 thru 800

VOLTS

Designed primarily for half–wave ac control applications, such as motor

controls, heating controls, and power supplies; or wherever half–wave, silicon

gate–controlled devices are needed.

•

Blocking Voltage to 800 Volts

On-State Current Rating of 8 Amperes RMS

High Surge Current Capability — 80 Amperes

Industry Standard TO–220AB Package for Ease of Design

Glass Passivated Junctions for Reliability and Uniformity

CASE 221A–06

(TO-220AB)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (1)

Peak Repetitive Reverse Voltage

DRM

RRM

Volts

(T = –40 to 125°C)

MCR8D

MCR8M

MCR8N

400

600

800

On-State RMS Current

(All Conduction Angles)

T(RMS)

Peak Non-repetitive Surge Current

(One Half Cycle, 60 Hz, T = 125°C)

TSM

Circuit Fusing Consideration (t = 8.3 ms)

I t

26.5

5.0

A sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

Average Gate Power (t = 8.3 ms, T = 80°C)

0.5

G(AV)

Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)

2.0

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.0

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

NOTE: V andV

260

foralltypescanbeappliedonacontinuousbasis.Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall

RRM

DRM

notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthat

the voltage ratings of the devices are exceeded.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Thyristor Device Data

Motorola, Inc. 1995

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与MCR8SN-BG相关器件

型号	品牌	获取价格	描述	数据表
MCR8SN-BL	MOTOROLA	获取价格	8A, 800V, SCR, TO-220AB
MCR8SN-BS	MOTOROLA	获取价格	8A, 800V, SCR, TO-220, 2 PIN
MCR8SN-BU	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220, 2 P
MCR8SN-BV	MOTOROLA	获取价格	暂无描述
MCR8SN-DW	MOTOROLA	获取价格	暂无描述
MCR8SNG	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8SNG	LITTELFUSE	获取价格	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源；或用于需要半波硅门控设
MCR908JK1ECDWE	NXP	获取价格	MCU,128RAM,4K FLASH,A/D, HC908JK3
MCR908JK1ECPE	NXP	获取价格	MCU,128RAM,4K FLASH,A/D
MCR908JK3ECDWE	FREESCALE	获取价格	The following revision history table summarizes changes contained in this document. For yo

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