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MCR8SN PDF预览

MCR8SN

更新时间： 2024-11-18 03:38:19
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅整流器栅
页数 文件大小 规格书
5页 58K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR8SN 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.14Is Samacsys：N
外壳连接：ANODE配置：SINGLE
关态电压最小值的临界上升速率：2 V/us最大直流栅极触发电流：0.2 mA
最大直流栅极触发电压：1 V最大维持电流：6 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大漏电流：0.5 mA
通态非重复峰值电流：90 A元件数量：1
端子数量：3最大通态电流：8000 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：800 V重复峰值反向电压：800 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
触发设备类型：SCRBase Number Matches：1

MCR8SN 数据手册

 浏览型号MCR8SN的Datasheet PDF文件第2页浏览型号MCR8SN的Datasheet PDF文件第3页浏览型号MCR8SN的Datasheet PDF文件第4页浏览型号MCR8SN的Datasheet PDF文件第5页 
MCR8SD, MCR8SM, MCR8SN  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave, silicon gate−controlled devices are needed.  
http://onsemi.com  
SCRs  
8 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• Sensitive Gate Allows Triggering by Microcontrollers and other  
Logic Circuits  
• Blocking Voltage to 800 Volts  
G
• On−State Current Rating of 8 Amperes RMS at 80°C  
A
K
• High Surge Current Capability − 80 Amperes  
• Rugged, Economical TO−220AB Package  
MARKING  
DIAGRAM  
• Glass Passivated Junctions for Reliability and Uniformity  
• Minimum and Maximum Values of IGT, VGT and IH Specified for  
Ease of Design  
• Immunity to dv/dt − 5 V/msec Minimum at 110°C  
AY WW  
MCR8SxG  
AKA  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
TO−220AB  
CASE 221A−09  
STYLE 3  
1
Rating  
Symbol  
Value  
Unit  
2
3
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
(T = −40 to 110°C, Sine Wave,  
V
J
RRM  
A
Y
= Assembly Location  
= Year  
400  
600  
800  
50 to 60 Hz, Gate Open)  
MCR8SD  
MCR8SM  
MCR8SN  
WW = Work Week  
x
G
= D, M, or N  
= Pb−Free Package  
On-State RMS Current  
(180° Conduction Angles; T = 80°C)  
I
8.0  
A
A
T(RMS)  
C
AKA = Diode Polarity  
Peak Non-Repetitive Surge Current  
I
TSM  
80  
(1/2 Cycle, Sine Wave, 60 Hz, T = 110°C)  
J
PIN ASSIGNMENT  
Cathode  
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
26.5  
5.0  
A sec  
1
Forward Peak Gate Power  
P
W
W
A
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
2
3
4
Anode  
C
Forward Average Gate Power  
P
0.5  
2.0  
Gate  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Anode  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 110  
−40 to 150  
°C  
°C  
J
Device  
Package  
Shipping  
T
stg  
MCR8SD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MCR8SDG  
TO−220AB  
(Pb−Free)  
MCR8SM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MCR8SMG  
TO−220AB  
(Pb−Free)  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
MCR8SN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MCR8SNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MCR8S/D  
 
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中文翻译

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MCR8SN 替代型号

型号 品牌 替代类型 描述 数据表
MCR8SNG LITTELFUSE

类似代替

 该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源；或用于需要半波硅门控设
S8008R LITTELFUSE

功能相似

 SCRs (1 A to 70 A)
CS220-8N CENTRAL

功能相似

 SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS

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 		8A, 800V, SCR, TO-220AB
MCR8SN-BG MOTOROLA

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