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MCR16M PDF预览

MCR16M

更新时间: 2024-11-04 21:13:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网栅极
页数 文件大小 规格书
4页 344K
描述
16A, 600V, SCR, TO-220AB

MCR16M 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.13
外壳连接:ANODE配置:SINGLE
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:20 mA
最大直流栅极触发电压:1 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:2 mA
通态非重复峰值电流:160 A元件数量:1
端子数量:3最大通态电压:1.7 V
最大通态电流:16000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:16 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:600 V重复峰值反向电压:600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

MCR16M 数据手册

 浏览型号MCR16M的Datasheet PDF文件第2页浏览型号MCR16M的Datasheet PDF文件第3页浏览型号MCR16M的Datasheet PDF文件第4页 
Order this document  
by MCR16/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola preferred devices  
Designed primarily for half–wave ac control applications, such as motor  
controls, heating controls, and power supplies; or wherever half–wave, silicon  
gate–controlled devices are needed.  
SCRs  
16 AMPERES RMS  
400 thru 800  
VOLTS  
Blocking Voltage to 800 Volts  
On-State Current Rating of 16 Amperes RMS  
High Surge Current Capability — 160 Amperes  
Industry Standard TO–220AB Package for Ease of Design  
Glass Passivated Junctions for Reliability and Uniformity  
A
K
A
G
CASE 221A–06  
(TO-220AB)  
Style 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (1)  
Peak Repetitive Reverse Voltage  
V
DRM  
V
RRM  
Volts  
(T = –40 to 125°C)  
J
MCR16D  
MCR16M  
MCR16N  
400  
600  
800  
On-State RMS Current  
(All Conduction Angles)  
I
16  
A
A
T(RMS)  
Peak Non-repetitive Surge Current  
(One Half Cycle, 60 Hz, T = 125°C)  
I
160  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
106  
5.0  
A sec  
Peak Gate Power (Pulse Width 1.0 µs, T = 80°C)  
P
Watts  
Watts  
A
C
GM  
Average Gate Power (t = 8.3 ms, T = 80°C)  
P
0.5  
C
G(AV)  
Peak Gate Current (Pulse Width 1.0 µs, T = 80°C)  
I
2.0  
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
40 to +125  
40 to +150  
°C  
J
T
stg  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
1.5  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds  
(1) andV  
T
260  
L
V
DRM  
foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall  
RRM  
notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe  
voltage ratings of the devices are exceeded.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  

与MCR16M相关器件

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Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
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MCR16M-AS MOTOROLA

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MCR16M-AU MOTOROLA

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16A, 600V, SCR, TO-220AB
MCR16M-BA MOTOROLA

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Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR16M-BC MOTOROLA

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MCR16M-BD MOTOROLA

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16A, 600V, SCR, TO-220AB
MCR16M-BG MOTOROLA

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Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB