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MCR16NG

更新时间： 2024-11-04 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极可控硅整流器局域网
页数 文件大小 规格书
5页 62K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR16NG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：CASE 221A-09, 3 PIN针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：7.41外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：100 V/us
最大直流栅极触发电流：20 mA最大直流栅极触发电压：1 V
最大维持电流：40 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大漏电流：2 mA通态非重复峰值电流：160 A
元件数量：1端子数量：3
最大通态电流：16000 A最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大均方根通态电流：16 A断态重复峰值电压：800 V
重复峰值反向电压：800 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：SCR
Base Number Matches：1

MCR16NG 数据手册

 浏览型号MCR16NG的Datasheet PDF文件第2页浏览型号MCR16NG的Datasheet PDF文件第3页浏览型号MCR16NG的Datasheet PDF文件第4页浏览型号MCR16NG的Datasheet PDF文件第5页 
MCR16N  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half−wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave, silicon gate−controlled devices are needed.  
http://onsemi.com  
Features  
SCRs  
16 AMPERES RMS  
800 VOLTS  
• Blocking Voltage to 800 Volts  
• On−State Current Rating of 16 Amperes RMS  
• High Surge Current Capability − 160 Amperes  
• Rugged Economical TO−220AB Package  
G
• Glass Passivated Junctions for Reliability and Uniformity  
• Minimum and Maximum Values of I , V , and I Specified for  
A
K
GT GT  
H
Ease of Design  
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C  
• Pb−Free Package is Available*  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
AY WW  
MCR16NG  
AKA  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = −40 to 125°C, Sine Wave,  
J
50 to 60 Hz, Gate Open)  
MCR16N  
800  
16  
TO−220AB  
CASE 221A−09  
STYLE 3  
On-State RMS Current  
I
A
A
T(RMS)  
1
2
(180° Conduction Angles; T = 80°C)  
C
3
Peak Non-repetitive Surge Current  
I
160  
TSM  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
J
A
Y
= Assembly Location  
= Year  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
106  
5.0  
A sec  
WW = Work Week  
G
AKA = Diode Polarity  
Forward Peak Gate Power  
P
W
W
A
GM  
= Pb−Free Package  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Forward Peak Gate Current  
I
GM  
PIN ASSIGNMENT  
Cathode  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
1
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
2
3
4
Anode  
T
stg  
Gate  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Anode  
ORDERING INFORMATION  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
Device  
Package  
Shipping  
MCR16N  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MCR16NG  
TO−220AB  
(Pb−Free)  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 4  
MCR16/D  
 
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中文翻译

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MCR16NG 替代型号

型号 品牌 替代类型 描述 数据表
TYN816RG STMICROELECTRONICS

完全替代

 16A SCRs
2N6509G LITTELFUSE

类似代替

 该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源消弧电路。 功能与特色:

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