MCP618-I/SL

更新时间： 2024-01-12 12:37:40

品牌	Logo	应用领域
美国微芯 - MICROCHIP		运算放大器放大器电路光电二极管信息通信管理
页数	文件大小	规格书
38页	637K
描述
2.3V to 5.5V Micropower Bi-CMOS Op Amps

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技术参数
数据手册

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MCP618-I/SL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

MCP618-I/SL 数据手册

MCP616/7/8/9

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, V_DD= +2.3V to +5.5V and V_SS= GND.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistances

Thermal Resistance, 8L-MSOP

Thermal Resistance, 8L-PDIP

Thermal Resistance, 8L-SOIC

Thermal Resistance, 14L-PDIP

Thermal Resistance, 14L-SOIC

Thermal Resistance, 14L-TSSOP

T_A

-40

-65

—

+85

+125

+150

°C

Note 1

θ_JA

—

211

89.3

149.5

—

°C/W

95.3

100

Note 1: The MCP616/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the

Junction Temperature (T_J) must not exceed the Absolute Maximum specification of +150°C.

1.1

Test Circuits

The test circuits used for the DC and AC tests are

shown in Figure 1-2 and Figure 1-3. The bypass

capacitors are laid out according to the rules discussed

in Section 4.6 “Supply Bypass”.

V_DD

1 µF

0.1 µF

V_IN

V_OUT

R_L

R_N

R_G

MCP61X

C_L

R_F

V_DD/2

V_L

FIGURE 1-2:

AC and DC Test Circuit for

Most Non-Inverting Gain Conditions.

V_DD

1 µF

0.1 µF

V_DD/2

V_OUT

R_L

R_N

R_G

MCP61X

C_L

R_F

V_IN

V_L

FIGURE 1-3:

AC and DC Test Circuit for

Most Inverting Gain Conditions.

DS21613C-page 5

1 2 3 456 7 8...38

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