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MCM6706ARJ7 PDF预览

MCM6706ARJ7

更新时间: 2024-11-20 22:40:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 存储
页数 文件大小 规格书
8页 156K
描述
32K x 8 Bit Static Random Access Memory

MCM6706ARJ7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:0.300 INCH, SOJ-32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.91最长访问时间:7 ns
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:20.96 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:3.75 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:BICMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

MCM6706ARJ7 数据手册

 浏览型号MCM6706ARJ7的Datasheet PDF文件第2页浏览型号MCM6706ARJ7的Datasheet PDF文件第3页浏览型号MCM6706ARJ7的Datasheet PDF文件第4页浏览型号MCM6706ARJ7的Datasheet PDF文件第5页浏览型号MCM6706ARJ7的Datasheet PDF文件第6页浏览型号MCM6706ARJ7的Datasheet PDF文件第7页 
Order this document  
by MCM6706AR/D  
SEMICONDUCTOR TECHNICAL DATA  
MCM6706AR  
32K x 8 Bit Static Random  
Access Memory  
The MCM6706AR is a 262,144 bit static random access memory organized as  
32,768 words of 8 bits, fabricated using high performance silicon–gate BiCMOS  
technology. Static design eliminates the need for external clocks or timing  
strobes.  
J PACKAGE  
300 MIL SOJ  
CASE 857–02  
Output enable (G) is a special control feature that provides increased system  
flexibility and eliminates bus contention problems.  
The MCM6706AR meets JEDEC standards and is available in a revolutionary  
pinout 300 mil, 32–lead surface–mount SOJ package.  
PIN ASSIGNMENT  
A0  
A1  
A2  
A3  
NC  
1
32  
31  
30  
29  
28  
27  
Single 5.0 V ± 10% Power Supply  
Fully Static — No Clock or Timing Strobes Necessary  
All Inputs and Outputs Are TTL Compatible  
Three State Outputs  
Fast Access Times: MCM6706AR–6 = 6 ns  
MCM6706AR–7 = 7 ns  
A14  
A13  
A12  
G
2
3
4
E
DQ0  
DQ1  
5
MCM6706AR–8 = 8 ns  
Center Power and I/O Pins for Reduced Noise  
DQ7  
DQ6  
6
7
26  
25  
24  
23  
22  
21  
20  
V
V
8
CC  
SS  
BLOCK DIAGRAM  
V
V
9
SS  
CC  
A
A
A
V
V
DQ2  
DQ3  
W
DQ5  
DQ4  
A11  
10  
11  
12  
13  
14  
15  
16  
CC  
SS  
A
MEMORY  
A4  
A10  
A9  
ROW  
DECODER  
MATRIX  
512 ROWS x 64 x 8  
COLUMNS  
A
A
A
A
A
A5  
A6  
A7  
19  
18  
17  
A8  
NC  
DQ0  
PIN NAMES  
COLUMN I/O  
INPUT  
DATA  
CONTROL  
COLUMN DECODER  
A0 – A14 . . . . . . . . . . . . . . . . . . . . . . . Address  
W . . . . . . . . . . . . . . . . . . . . . . . . . Write Enable  
E . . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable  
G . . . . . . . . . . . . . . . . . . . . . . . Output Enable  
DQ0 – DQ7 . . . . . . . . . . . . Data Input/Output  
DQ7  
E
A
A
A
A
A
A
V
V
. . . . . . . . . . . . . . . . + 5 V Power Supply  
. . . . . . . . . . . . . . . . . . . . . . . . . . . Ground  
CC  
SS  
NC . . . . . . . . . . . . . . . . . . . . . . No Connection  
W
G
5/95  
Motorola, Inc. 1995  

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