Datasheet > MCM63R736RS3R

MCM63R736RS3R

更新时间： 2024-11-26 04:40:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		静态存储器
页数	文件大小	规格书
21页	311K
描述
128KX36 LATE-WRITE SRAM, 1.5ns, CBGA119, FLIP CHIP, CERAMIC, BGA-119

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCM63R736RS3R 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM63R736/D

MCM63R736

MCM63R818

4M Late Write HSTL

The MCM63R736/818 is a 4M–bit synchronous late write fast static RAM

designed to provide high performance in secondary cache and ATM switch,

Telecom, and other high speed memory applications. The MCM63R818

(organized as 256K words by 18 bits), and the MCM63R736 (organized as 128K

words by 36 bits) are fabricated in Motorola’s high performance silicon gate

copper CMOS technology.

The differential clock (CK) inputs control the timing of read/write operations of

theRAM. AttherisingedgeofCK, alladdresses, writeenables, andsynchronous

selects are registered. An internal buffer and special logic enable the memory to

accept write data on the rising edge of CK, a cycle after address and control sig-

nals. Read data is also driven on the rising edge of CK.

FC PACKAGE

FLIPPED CHIP PBGA

CASE 999E–01

The RAM uses HSTL inputs and outputs. The adjustable input trip–point (V

)

ref

and output voltage (V

) gives the system designer greater flexibility in

DDQ

optimizing system performance.

The synchronous write and byte enables allow writing to individual bytes or the

entire word.

The impedance of the output buffers is programmable, allowing the outputs to

match the impedance of the circuit traces which reduces signal reflections.

•

Byte Write Control

2.5 V –5% to 3.3 V +10% Operation

2.375 V to 3.6 V Operation

HSTL — I/O (JEDEC Standard JESD8–6 Class I Compatible)

HSTL — User Selectable Input Trip–Point

HSTL — Compatible Programmable Impedance Output Drivers

Boundary Scan (JTAG) IEEE 1149.1 Compatible

Differential Clock Inputs

Optional x18 or x36 Organization

MCM63R736/818–3 = 3 ns

MCM63R736/818–3.3 = 3.3 ns

MCM63R736/818–3.7 = 3.7 ns

MCM63R736/818–4 = 4 ns

MCM63R736/818–4.4 = 4.4 ns

MCM63R736/818–5 = 5 ns

•

Sleep Mode Operation (ZZ pin)

119–Bump, 50 mil (1.27 mm) Pitch, 14mm x 22mm Flipped Chip Plastic

Ball Grid Array (PBGA) Package

8/6/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63R736•MCM63R818

12 3 4 5 6 7...21

中文翻译

下载PDF

与MCM63R736RS3R相关器件

型号	品牌	获取价格	描述	数据表
MCM63R736RS4.4R	MOTOROLA	获取价格	128KX36 LATE-WRITE SRAM, 2.2ns, CBGA119, FLIP CHIP, CERAMIC, BGA-119
MCM63R736RS5	MOTOROLA	获取价格	Late-Write SRAM, 128KX36, 2.5ns, CMOS, CBGA119, FLIP CHIP, CERAMIC, BGA-119
MCM63R736RS5R	MOTOROLA	获取价格	Late-Write SRAM, 128KX36, 2.5ns, CMOS, CBGA119, FLIP CHIP, CERAMIC, BGA-119
MCM63R818FC3.3	NXP	获取价格	256KX18 LATE-WRITE SRAM, 1.65ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, B
MCM63R818FC3.3R	MOTOROLA	获取价格	256KX18 LATE-WRITE SRAM, 1.65ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, B
MCM63R818FC3.3R	NXP	获取价格	256KX18 LATE-WRITE SRAM, 1.65ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, B
MCM63R818FC4	MOTOROLA	获取价格	256KX18 LATE-WRITE SRAM, 2ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-
MCM63R818FC4.4	MOTOROLA	获取价格	256KX18 LATE-WRITE SRAM, 2.2ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BG
MCM63R818FC4.4R	MOTOROLA	获取价格	256KX18 LATE-WRITE SRAM, 2.2ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BG
MCM63R818FC4R	MOTOROLA	获取价格	Late-Write SRAM, 256KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHI

与MCM63R736RS3R相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63R736RS3R

MCM63R736RS3R 数据手册

与MCM63R736RS3R相关器件

与MCM63R736RS3R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63R736RS3R

MCM63R736RS3R 数据手册

与MCM63R736RS3R相关器件

与MCM63R736RS3R相关文章

您还可以找

您在本页遇到什么问题？