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MCM63P819KTQ133 PDF预览

MCM63P819KTQ133

更新时间: 2024-11-22 02:56:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 静态存储器内存集成电路
页数 文件大小 规格书
20页 395K
描述
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

MCM63P819KTQ133 数据手册

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Freescale Semiconductor, Inc.  
SEMICONDUCTOR TECHNICAL DATA  
MOTOROLA  
Order this document  
by MCM63P737K/D  
MCM63P737K  
MCM63P819K  
Advance Information  
128K x 36 and 256K x 18 Bit  
Pipelined BurstRAM  
Synchronous Fast Static RAM  
The MCM63P737K and MCM63P819K are 4M–bit synchronous fast static  
RAMs designedtoprovideaburstable, highperformance, secondarycache. The  
MCM63P737K (organized as 128K words by 36 bits) and the MCM63P819K  
(organized as 256K words by 18 bits) integrate input registers, an output register,  
a 2–bit address counter, and high speed SRAM onto a single monolithic circuit  
for reduced parts count in cache data RAM applications. Synchronous design  
allows precise cycle control with the use of an external clock (K).  
TQ PACKAGE  
TQFP  
CASE 983A–01  
Addresses (SA), data inputs (DQx), and all control signals except output  
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)  
controlled through positive–edge–triggered noninverting registers.  
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst  
addresses can be generated internally by the MCM63P737K and MCM63P819K  
(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate  
of LBO) and controlled by the burst address advance (ADV) input pin.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals.  
ZP PACKAGE  
PBGA  
CASE 999–02  
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-  
nous write enable (SW) are provided to allow writes to either individual bytes or  
to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb  
controls DQb, etc. Individual bytes are written if the selected byte writes SBx are  
asserted with SW. All bytes are written if either SGW is asserted or if all SBx and  
SW are asserted.  
For read cycles, pipelined SRAMs output data is temporarily stored by an  
edge–triggeredoutput register and then released to the output buffers at the next  
rising edge of clock (K).  
The MCM63P737K and MCM63P819K operate from a 3.3 V core power  
supply and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and  
outputs are JEDEC standard JESD8–5 compatible.  
MCM63P737K/MCM63P819K–166 = 3.5 ns Access/6 ns Cycle (166 MHz)  
MCM63P737K/MCM63P819K–150 = 3.8 ns Access/6.7 ns Cycle (150 MHz)  
MCM63P737K/MCM63P819K–133 = 4 ns Access/7.5 ns Cycle (133 MHz)  
3.3 V +10%, –5% Core Power Supply, 2.5 V or 3.3 V I/O Supply  
ADSP, ADSC, and ADV Burst Control Pins  
Selectable Burst Sequencing Order (Linear/Interleaved)  
Single–Cycle Deselect Timing  
Internally Self–Timed Write Cycle  
Byte Write and Global Write Control  
Sleep Mode (ZZ)  
JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
REV 1  
1/24/00  
Motorola, Inc. 2000  
For More Information On This Product,  
Go to: www.freescale.com  

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