Datasheet > MCM63P819KTQ150

MCM63P819KTQ150

更新时间： 2024-11-18 15:41:11

品牌	Logo	应用领域
恩智浦 - NXP		静态存储器内存集成电路
页数	文件大小	规格书
20页	394K
描述
256KX18 CACHE SRAM, 3.8ns, PQFP100, TQFP-100

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MCM63P819KTQ150 技术参数

生命周期：	Transferred	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.53
最长访问时间：	3.8 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	4718592 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	18	功能数量：	1
端子数量：	100	字数：	262144 words
字数代码：	256000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	256KX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	3.465 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	宽度：	14 mm
Base Number Matches：	1

MCM63P819KTQ150 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

Order this document

by MCM63P737K/D

MCM63P737K

MCM63P819K

Advance Information

128K x 36 and 256K x 18 Bit

Pipelined BurstRAM

Synchronous Fast Static RAM

The MCM63P737K and MCM63P819K are 4M–bit synchronous fast static

RAMs designedtoprovideaburstable, highperformance, secondarycache. The

MCM63P737K (organized as 128K words by 36 bits) and the MCM63P819K

(organized as 256K words by 18 bits) integrate input registers, an output register,

a 2–bit address counter, and high speed SRAM onto a single monolithic circuit

for reduced parts count in cache data RAM applications. Synchronous design

allows precise cycle control with the use of an external clock (K).

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)

controlled through positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63P737K and MCM63P819K

(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

ZP PACKAGE

PBGA

CASE 999–02

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb

controls DQb, etc. Individual bytes are written if the selected byte writes SBx are

asserted with SW. All bytes are written if either SGW is asserted or if all SBx and

SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggeredoutput register and then released to the output buffers at the next

rising edge of clock (K).

The MCM63P737K and MCM63P819K operate from a 3.3 V core power

supply and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and

outputs are JEDEC standard JESD8–5 compatible.

•

MCM63P737K/MCM63P819K–166 = 3.5 ns Access/6 ns Cycle (166 MHz)

MCM63P737K/MCM63P819K–150 = 3.8 ns Access/6.7 ns Cycle (150 MHz)

MCM63P737K/MCM63P819K–133 = 4 ns Access/7.5 ns Cycle (133 MHz)

3.3 V +10%, –5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Single–Cycle Deselect Timing

Internally Self–Timed Write Cycle

•

Byte Write and Global Write Control

Sleep Mode (ZZ)

JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

1/24/00

Motorola, Inc. 2000

MOTOROLA FAST SRAM

MCM63P737K•MCM63P819K

For More Information On This Product,

Go to: www.freescale.com

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与MCM63P819KTQ150相关器件

型号	品牌	获取价格	描述	数据表
MCM63P819KTQ150R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KTQ166	NXP	获取价格	256KX18 CACHE SRAM, 3.5ns, PQFP100, TQFP-100
MCM63P819KTQ166	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KTQ166R	NXP	获取价格	256KX18 CACHE SRAM, 3.5ns, PQFP100, TQFP-100
MCM63P819KTQ166R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KZP133	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KZP133R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KZP150	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KZP150R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P819KZP150R	NXP	获取价格	IC,SYNC SRAM,256KX18,CMOS,BGA,119PIN,PLASTIC

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