Datasheet > MCM63P819ZP133

MCM63P819ZP133

更新时间： 2024-11-22 07:39:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		静态存储器
页数	文件大小	规格书
21页	320K
描述
Cache SRAM, 256KX18, 4ns, CMOS, PBGA119, PLASTIC, BGA-119

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MCM63P819ZP133 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by MCM63P737/D

MCM63P737

MCM63P819

128K x 36 and 256K x 18 Bit

Pipelined BurstRAM

Synchronous Fast Static RAM

The MCM63P737 and MCM63P819 are 4M–bit synchronous fast static RAMs

designed to provide a burstable, high performance, secondary cache for the

PowerPC and other high performance microprocessors. The MCM63P737 is

organized as 128K words of 36 bits each and the MCM63P819 is organized as

256K words of 18 bits each. These devices integrate input registers, an output

circuit for reduced parts count in cache data RAM applications. Synchronous

design allows precise cycle control with the use of an external clock (K).

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)

controlled through positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63P737 and MCM63P819

(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

TQ PACKAGE

TQFP

CASE 983A–01

ZP PACKAGE

PBGA

CASE 999–02

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb

controls DQb, etc. Individual bytes are written if the selected byte writes SBx are

asserted with SW. All bytes are written if either SGW is asserted or if all SBx and

SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggeredoutput register and then released to the output buffers at the next

rising edge of clock (K).

The MCM63P737 and MCM63P819 operate from a 3.3 V core power supply

and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs

are JEDEC standard JESD8–5 compatible.

•

MCM63P737/MCM63P819–166 = 3.5 ns Access/6 ns Cycle (166 MHz)

MCM63P737/MCM63P819–150 = 3.8 ns Access/6.7 ns Cycle (150 MHz)

MCM63P737/MCM63P819–133 = 4 ns Access/7.5 ns Cycle (133 MHz)

3.3 V + 10%, – 5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Single–Cycle Deselect Timing

Internally Self–Timed Write Cycle

•

Byte Write and Global Write Control

Sleep Mode (ZZ)

JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

REV 2

3/12/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63P737•MCM63P819

12 3 4 5 6 7...21

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与MCM63P819ZP133相关器件

型号	品牌	获取价格	描述	数据表
MCM63P819ZP133R	MOTOROLA	获取价格	Cache SRAM, 256KX18, 4ns, CMOS, PBGA119, PLASTIC, BGA-119
MCM63P819ZP150	MOTOROLA	获取价格	Cache SRAM, 256KX18, 3.8ns, CMOS, PBGA119, PLASTIC, BGA-119
MCM63P819ZP166	MOTOROLA	获取价格	256KX18 CACHE SRAM, 3.5ns, PBGA119, PLASTIC, BGA-119
MCM63P819ZP166R	MOTOROLA	获取价格	Cache SRAM, 256KX18, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119
MCM63P837	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P837TQ166	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P837TQ166R	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P837TQ200	NXP	获取价格	256KX36 CACHE SRAM, 3ns, PQFP100, PLASTIC, TQFP-100
MCM63P837TQ200	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P837TQ200R	MOTOROLA	获取价格	256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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