MCH3914
Ordering number : ENA1511
SANYO Sem iconductors
DATA S HEET
N-Channel Junction Silicon FET
High-Frequency Amplifier,
Analog Switch Applications
MCH3914
Features
•
yfs is large.
|
|
•
•
•
•
Ciss is small.
Small package.
FBET process.
Halogen free compliance.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
15
--15
5
DSX
V
V
GDS
I
mA
mA
mW
°C
G
Drain Current
I
50
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
When mounted on ceramic substrate (600mm2 0.8mm)
300
150
×
D
Tj
Tstg
--55 to +150
°C
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--15
max
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--10 A, V =0V
V
nA
V
μ
(BR)GDS
G
DS
I
V
=--10V, V =0V
--1.0
--3.0
GSS
(off)
GS
DS
=5V, I =10
V
V
A
--0.6
--1.4
μ
GS
DS
D
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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No. A1511-1/4
72209AC TK IM TC-00002014