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MCH4021

更新时间： 2024-11-06 11:06:19
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管
页数 文件大小 规格书
9页 272K
描述
NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

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中文翻译

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MCH4021 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.53最大集电极电流 (IC)：0.15 A
集电极-发射极最大电压：8 V配置：SINGLE
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-F4
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.4 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：13000 MHz
Base Number Matches：1

MCH4021 数据手册

 浏览型号MCH4021的Datasheet PDF文件第2页浏览型号MCH4021的Datasheet PDF文件第3页浏览型号MCH4021的Datasheet PDF文件第4页浏览型号MCH4021的Datasheet PDF文件第5页浏览型号MCH4021的Datasheet PDF文件第6页浏览型号MCH4021的Datasheet PDF文件第7页 
Ordering number : ENA1281  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
MCH4021  
High Frequency Low-Noise Amplifier  
Features  
•
Low-noise use : NF=1.2dB typ (f=1GHz).  
•
•
High cut-off frequency : f =16GHz typ (V =5V).  
T
CE  
High gain : S21e 2=17.5dB typ (f=1GHz).  
|
|
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
8
CBO  
V
V
CEO  
V
2
V
EBO  
I
C
150  
400  
150  
mA  
mW  
°C  
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
-55 to +150  
°C  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
V
=5V, I =0A  
E
A
A
μ
CBO  
CB  
I
V
=1V, I =0A  
1.0  
μ
EBO  
EB C  
h
V
CE  
=5V, I =50mA  
60  
13  
150  
FE  
C
Gain-Bandwidth Product  
Forward Transfer Gain  
Noise Figure  
f
T
V
CE  
=5V, I =50mA  
16  
GHz  
dB  
C
S21e 2  
V
CE  
=5V, I =50mA, f=1GHz  
17.5  
1.2  
|
|
C
NF  
V
CE  
=1V, I =10mA, f=1GHz  
1.8  
dB  
C
Marking : GL  
Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1281-1/9  
80608AB TI IM TC-00001500  
1234567...9

中文翻译

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