Datasheet > MCH3106-TL-E

MCH3106-TL-E

更新时间： 2024-09-21 11:13:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
7页	366K
描述
双极晶体管，-12V -3A，低饱和压，PNP 单 MCPH3

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中文翻译

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数据手册

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MCH3106-TL-E 数据手册

Ordering number : EN6861C

MCH3106

Bipolar Transistor

http://onsemi.com

–

(

)

sat , PNP Single MCPH3

12V, 3A, Low V

Applicaitons

•

Relay drivers, lamp drivers, motor drivers, ﬂash

Features

•

Adoption of MBIT processes

Large current capacity

High-speed switching

Low collector-to-emitter saturation voltage

Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)

High allowable power dissipation

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

--15

--12

-- 5

CBO

CEO

EBO

-- 3

Collector Current (Pulse)

Base Current

-- 5

--600

0.9

Collector Dissipation

Junction Temperature

Storage Temperature

When mounted on ceramic substrate (600mm²0.8mm)

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: MCPH3

7019A-004

• JEITA, JEDEC

: SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

MCH3106-TL-E

0.15

2.0

Packing Type : TL

Marking

0 to 0.02

0.65

0.3

Electrical Connection

1 : Base

2 : Emitter

3 : Collector

MCPH3

Semiconductor Components Industries, LLC, 2013

September, 2013

D0512 TKIM TC-00002848/D1004 TSIM TB-00000342/20502 TSIM/22201 TSIM TA-3071 No.6861-1/7

12 3 4 5 6 7

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