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MCC132-12IO1 PDF预览

MCC132-12IO1

更新时间: 2024-11-30 22:44:59
品牌 Logo 应用领域
IXYS 可控硅二极管
页数 文件大小 规格书
4页 175K
描述
Thyristor Modules Thyristor/Diode Modules

MCC132-12IO1 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-XUFM-X7Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:4.18
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:150 mA
最大直流栅极触发电压:2.6 V快速连接描述:2G-2GR
螺丝端子的描述:A-K-AK最大维持电流:200 mA
JESD-30 代码:R-XUFM-X7最大漏电流:40 mA
通态非重复峰值电流:5800 A元件数量:2
端子数量:7最大通态电流:300000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:300 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

MCC132-12IO1 数据手册

 浏览型号MCC132-12IO1的Datasheet PDF文件第2页浏览型号MCC132-12IO1的Datasheet PDF文件第3页浏览型号MCC132-12IO1的Datasheet PDF文件第4页 
MCC132  
MCD132  
ITRMS = 2x 300 A  
ITAVM = 2x 130 A  
VRRM = 800-1800 V  
Thyristor Modules  
Thyristor/Diode Modules  
7
6
3
4
VRSM  
VDSM  
VRRM  
VDRM  
Type  
2
5
1
V
V
Version 1  
Version 1  
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
MCC 132-08io1  
MCC 132-12io1  
MCC 132-14io1  
MCC 132-16io1  
MCC 132-18io1  
MCD 132-08io1  
MCD 132-12io1  
MCD 132-14io1  
MCD 132-16io1  
MCD 132-18io1  
3
3
6 7 1  
5 4 2  
Symbol  
Test Conditions  
Maximum Ratings  
MCC  
MCD  
ITRMS, IFRMS  
TVJ = TVJM  
TC = 85°C; 180° sine  
300  
130  
A
A
ITAVM FAVM  
, I  
1
5 4 2  
ITSM, IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
4750  
5080  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
4230  
4530  
A
A
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
113 000  
108 000  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
89 500  
86 200  
A2s  
A2s  
Features  
International standard package  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
UL registered, E 72873  
Keyed gate/cathode twin pins  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 500 A  
150  
A/ms  
f =50 Hz, tP =200 ms  
VD = 2/3 VDRM  
IG = 0.5 A  
non repetitive, IT = 500 A  
VDR = 2/3 VDRM  
500  
A/ms  
V/ms  
diG/dt = 0.5 A/ms  
(dv/dt)cr  
PGM  
TVJ = TVJM  
;
1000  
RGK = ¥; method 1 (linear voltage rise)  
Applications  
Motor control  
Power converter  
Heat and temperature control for  
industrial furnaces and chemical  
processes  
Lighting control  
TVJ = TVJM  
IT = ITAVM  
tP = 30 ms  
tP = 500 ms  
120  
60  
8
W
W
W
PGAV  
VRGM  
10  
V
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
Contactless switches  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
Space and weight savings  
Simple mounting  
Improved temperature and power  
IISOL £ 1 mA  
Md  
Mounting torque (M6)  
Terminal connection torque (M6)  
2.25-2.75/20-25 Nm/lb.in.  
4.5-5.5/40-48 Nm/lb.in.  
cycling  
Reduced protection circuits  
Weight  
Typical including screws  
125  
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 4  

MCC132-12IO1 替代型号

型号 品牌 替代类型 描述 数据表
MCC132-16IO1 IXYS

完全替代

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MCC162-16IO1 IXYS

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Thyristor Modules Thyristor/Diode Modules
MCC162-12IO1 IXYS

类似代替

Thyristor Modules Thyristor/Diode Modules

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