DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4564EC727
64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
REGISTERED TYPE
Description
The MC-4564EC727 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of
128 M SDRAM: µPD45128441 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 67,108,864 words by 72 bits organization (ECC type)
• Clock frequency and access time from CLK
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
Part number
/CAS latency
Module type
MC-4564EC727EF-A75
CL = 3
CL = 2
CL = 3
CL = 2
133 MHz
100 MHz
133 MHz
100 MHz
5.4 ns
6.0 ns
5.4 ns
6.0 ns
PC133 Registered DIMM
Rev. 1.0 Compliant
★
★
MC-4564EC727PF-A75
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
★
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ± 10 % of series resistor
• Single 3.3 V ±0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Registered type
• Serial PD
• Stacked monolithic technology
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
©
Document No.
Date Published February 2000 NS CP(K)
Printed in Japan
M14461EJ2V0DS00 (2nd edition)
The mark ★ shows major revised points.