Datasheet > MC-4564EC726EFB-A10

MC-4564EC726EFB-A10

更新时间： 2024-11-02 22:20:27

品牌	Logo	应用领域
日电电子 - NEC		内存集成电路光电二极管动态存储器时钟
页数	文件大小	规格书
16页	293K
描述
64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4564EC726

64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

REGISTERED TYPE

Description

The MC-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of

128 M SDRAM: µPD45128441 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 67,108,864 words by 72 bits organization (ECC type)

• Clock frequency and access time from CLK

Part number

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

Module type

MC-4564EC726EFB-A80

MC-4564EC726EFB-A10

MC-4564EC726PFB-A80

MC-4564EC726PFB-A10

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

6 ns

7 ns

6 ns

7 ns

PC100 Registered DIMM

Rev. 1.2 Compliant

125 MHz

100 MHz

77 MHz

★

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ± 10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles / 64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Registered type

• Serial PD

• Stacked monolithic technology

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14460EJ2V0DS00 (2nd edition)

Date Published February 2000 NS CP(K)

Printed in Japan

The mark ★ shows major revised points.

1999

12 3 4 5 6 7...16

中文翻译

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与MC-4564EC726EFB-A10相关器件

型号	品牌	获取价格	描述	数据表
MC-4564EC726EFB-A80	NEC	获取价格	64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4564EC726PFB-A10	NEC	获取价格	64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4564EC726PFB-A80	NEC	获取价格	64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4564EC727	NEC	获取价格	64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4564EC727EF-A75	NEC	获取价格	64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4564EC727PF-A75	NEC	获取价格	64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC457A	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, 70V V(RRM), Silicon
MC4580	UTC	获取价格	LINEAR INTEGRATED CIRCUIT
MC4580(8DIP)	UTC	获取价格	Operational Amplifier, 2 Func, 3000uV Offset-Max, BIPolar, PDIP8
MC4580(8SOP)	UTC	获取价格	Operational Amplifier, 2 Func, 3000uV Offset-Max, BIPolar, PDSO8

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