Datasheet > MBRTA40035L

MBRTA40035L

更新时间： 2024-11-07 01:21:39

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	458K
描述
Low VF Silicon Power Schottky Diode

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中文翻译

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数据手册

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MBRTA40035L 数据手册

MBRTA40035(R)L

V_RRM= 35 V

I_F(AV)= 400 A

Low V_FSilicon Power

Schottky Diode

Features

• High Surge Capability

• Type 35 V V_RRM

Heavy Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Symbol

Conditions

Parameter

MBRTA40035(R)L Unit

V_RRM

V_RMS

V_DC

T_j

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Operating temperature

-55 to 150

°C

T_stg

Storage temperature

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Symbol

Conditions

Parameter

MBRTA40035(R)L Unit

I_F(AV)

I_FSM

T_C= 100 °C

Average forward current (per pkg)

Peak forward surge current (per leg)

400

t_p= 8.3 ms, half sine

3000

Maximum instantaneous forward voltage (per

leg)

V_F

_FM= 200 A, Tj = 25 °C

0.60

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

T_j= 25 °C

I_R

T_j= 100 °C

250

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R_ΘJC

0.35

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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