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MBRM760 PDF预览

MBRM760

更新时间： 2024-01-21 06:46:38
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 75K
描述
7A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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中文翻译

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MBRM760 数据手册

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MBRM760  
7A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
POWERMITEÒ3  
DEVELOPMENT  
UNDER  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
·
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
Low Reverse Current  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
POWERMITEâ3  
E
A
P
Min  
4.03  
6.40  
Max  
4.09  
6.61  
Dim  
A
G
3
B
C
.889 NOM  
1.83 NOM  
1.10 1.14  
.178 NOM  
·
Plastic Material: UL Flammability  
Classification Rating 94V-0  
H
J
D
B
E
Mechanical Data  
G
H
1
2
5.01  
5.17  
4.43  
·
·
Case: POWERMITEâ3, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
M
J
4.37  
D
K
K
.178 NOM  
C
C
·
·
·
·
Moisture sensitivity: Level 1 per J-STD-020A  
Polarity: See Diagram  
Marking: Type Number  
L
L
.71  
.36  
.77  
.46  
M
P
PIN 1  
PIN 2  
PIN 3, BOTTOMSIDE  
HEAT SINK  
1.73  
1.83  
Weight: 0.072 grams (approx.)  
All Dimensions in mm  
Note:  
Pins 1 & 2 must be electrically  
connected at the printed circuit board.  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
60  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
42  
7
V
A
Average Rectified Output Current  
(See also figure 4)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave Superimposed on Rated Load  
IFSM  
100  
A
(JEDEC Method)  
@ TC = 55°C  
RqJS  
Tj  
Typical Thermal Resistance Junction to Soldering Point  
Operating Temperature Range  
2.5  
°C/W  
°C  
-65 to +125  
-65 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
V(BR)R  
IR = 0.5mA  
Reverse Breakdown Voltage (Note 1)  
60  
¾
¾
V
IF = 3.5A, Tj = 25°C  
IF = 3.5A, Tj = 125°C  
IF = 7A, Tj = 25°C  
IF = 7A, Tj = 125°C  
¾
¾
¾
¾
0.49  
0.38  
0.57  
0.46  
0.52  
¾
0.60  
¾
VF  
Forward Voltage (Note 1)  
V
mA Tj = 25°C, VR = 60V  
mA Tj = 125°C, VR = 60V  
¾
¾
5
200  
20  
IR  
Reverse Current (Note 1)  
Total Capacitance  
10  
CT  
f = 1.0MHz, VR = 4.0V DC  
pF  
¾
375  
¾
Notes:  
1. Short duration test pulse used to minimize self-heating effect.  
DS30357 Rev. 2 - 1  
1 of 3  
www.diodes.com  
MBRM760  
123

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