Datasheet > MBRH20035L

MBRH20035L

更新时间： 2024-09-20 01:21:11

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	366K
描述
Low VF Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBRH20035L 数据手册

MBRH20035(R)L

V_RRM= 35 V

I_F(AV)= 200 A

Low V_FSilicon Power

Schottky Diode

Features

• High Surge Capability

• Type 35 V V_RRM

• Not ESD Sensitive

D-67 Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Symbol

Conditions

Parameter

MBRH20035(R)L Unit

V_RRM

V_RMS

V_DC

T_j

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Operating temperature

-55 to 150

°C

T_stg

Storage temperature

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Symbol

Conditions

Parameter

MBRH20035(R)L Unit

I_F(AV)

I_FSM

T_C= 100 °C

Average forward current

200

t_p= 8.3 ms, half sine

Peak forward surge current

3000

V_F

_FM= 200 A, Tj = 25 °C

Maximum instantaneous forward voltage

0.60

T_j= 25 °C

Maximum instantaneous reverse

current at rated DC blocking voltage

I_R

T_j= 100 °C

200

Thermal characteristics

Maximum thermal resistance,

junction - case

R_ΘJC

0.35

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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中文翻译

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