Datasheet > MBRF40100CTR

MBRF40100CTR

更新时间： 2024-11-19 00:56:39

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	720K
描述
40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF40100CTR 数据手册

MBRF4035CTR thru MBRF40200CTR

Pb Free Plating Product

40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

ITO-220AB

Unit : inch (mm)

Features

ꢀ

Standard MBR matured technology with high reliablity

Low forward voltage drop

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

.130(3.3)

.114(2.9)

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS,EPS and UPS

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Car Audio Amplifiers and Sound Device Systems

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: Fully Isolated Molding TO-220F Full Plastic Pak

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.1 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

PARAMETER

SYMBOL 4035 4045 4050 4060 4090 40100 40150 40200 UNIT

CTR

100

CTR

150

105

150

CTR

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated V_R, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

330

Peak repetitive reverse surge Current (Note 1)

Maximum instantaneous forward voltage (Note 2)

I_F=20A, T_J=25℃

0.75

0.65

0.80

0.75

0.77

0.84

0.74

0.90

I_F=20A, T_J=125℃

V_F

0.67

0.80

1.01

I_F=40A, T_J=25℃

I_F=40A, T_J=125℃

1.0

0.5

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

Voltage rate of change (Rated V_R)

Typical thermal resistance

10,000

3.5

dV/dt

R_θJC

T_J

V/μs

℃

Operating junction temperature range

Storage temperature range

- 55 to + 150

T_STG

℃

Note 1: 2.0μs Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle

Rev.07C

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与MBRF40100CTR相关器件

型号	品牌	获取价格	描述	数据表
MBRF40150CT	GOOD-ARK	获取价格	Schottky Barrier Rectifier
MBRF40150CTR	THINKISEMI	获取价格	40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF40200CT	SENO	获取价格	40.0A SCHOTTKY BARRIER DIODE
MBRF40200CT	BL Galaxy Electrical	获取价格	40A,200V,Schottky Barrier Rectifiers
MBRF40200CT	FOSHAN	获取价格	TO-220F
MBRF40200CTR	THINKISEMI	获取价格	40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF40250S	GOOD-ARK	获取价格	肖特基整流管
MBRF40250S	BL Galaxy Electrical	获取价格	40A,250V,Schottky Barrier Rectifiers
MBRF40250T	ONSEMI	获取价格	250 V, 40 A SWITCHMODE Schottky Power Rectifier
MBRF40250T	KERSEMI	获取价格	250 V, 40 A SWITCHMODE Schottky Power Rectifier

与MBRF40100CTR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF40100CTR

MBRF40100CTR 数据手册

与MBRF40100CTR相关器件

与MBRF40100CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF40100CTR

MBRF40100CTR 数据手册

与MBRF40100CTR相关器件

与MBRF40100CTR相关文章

您还可以找

您在本页遇到什么问题？