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MBRF4060CT PDF预览

MBRF4060CT

更新时间： 2024-11-19 01:10:07
品牌 Logo 应用领域
圣诺 - SENO 局域网二极管
页数 文件大小 规格书
2页 322K
描述
40.0A SCHOTTKY BARRIER DIODE

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MBRF4060CT 数据手册

 浏览型号MBRF4060CT的Datasheet PDF文件第2页 
Zibo Seno Electronic Engineering Co., Ltd.  
MBRF640 – MBRF6200  
6.0 A SCHOTTKY BARRIER DIODE  
Features  
!
Schottky Barrier Chip  
B
!
!
!
!
!
Ideally Suited for Automatic Assembly  
ITO-220AC  
Min  
C
Low Power Loss, High Efficiency  
For Use in Low Voltage Application  
Guard Ring Die Construction  
Plastic Case Material has UL Flammability  
Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Dim  
A
B
C
D
E
Max  
15.50  
10.50  
2.90  
14.50  
9.50  
G
A
E
2.55  
PIN1  
3
3.30  
4.30  
13.00  
0.30  
14.00  
0.90  
D
F
G
H
I
3.00 Ø  
6.30  
3.80 Ø  
7.30  
Mechanical Data  
F
!
!
Case: ITO-220AC, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
4.20  
4.80  
P
J
2.50  
2.90  
K
L
0.47  
0.75  
I
!
!
!
Polarity: See Diagram  
2.50  
3.10  
Mounting Position: Any  
P
4.88  
5.28  
L
H
All Dimensions in mm  
Lead Free: For RoHS / Lead Free Version  
PIN 1 +  
PIN 3 -  
+
Case  
J
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
Units  
Characteristic  
Symbol  
640  
645  
650  
660  
680  
6100  
6150  
6200  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
40  
45  
50  
60  
80  
100  
150  
200  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
28  
31  
35  
42  
56  
70  
105  
140  
V
A
Average Rectified Output Current @TL = 100°C  
(Note 1)  
6. 0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
100  
FSM  
I
A
120  
V
Forward Voltage  
@IF = 6A  
V
FM  
0.70  
0.80  
0.85  
0.92  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.1  
20  
IRM  
mA  
350  
280  
pF  
°C/W  
°C  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating and Storage Temperature Range  
C
j
200  
3.0  
Rꢀ  
JA  
3.5  
Tj, TSTG  
-55 to +150  
-55 to +175  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
www.senocn.com  
MBRF640– MBRF6200  
1 of 2  
Alldatasheet  
12

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