Datasheet > MBRF4040CT

MBRF4040CT

更新时间： 2024-02-12 16:20:47

品牌	Logo	应用领域
圣诺 - SENO		/
页数	文件大小	规格书
2页	322K
描述
40.0A SCHOTTKY BARRIER DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF4040CT 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MBRF640 – MBRF6200

6.0 A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

ITO-220AC

Min

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Dim

Max

15.50

10.50

2.90

14.50

9.50

2.55

PIN1

3.30

4.30

13.00

0.30

14.00

0.90

3.00 Ø

6.30

3.80 Ø

7.30

Mechanical Data

Case: ITO-220AC, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

4.20

4.80

2.50

2.90

0.47

0.75

Polarity: See Diagram

2.50

3.10

Mounting Position: Any

4.88

5.28

All Dimensions in mm

Lead Free: For RoHS / Lead Free Version

PIN 1 +

PIN 3 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

Units

Characteristic

Symbol

640

645

650

660

680

6100

6150

6200

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

200

RMS Reverse Voltage

V^R(RMS)

I^O

105

140

Average Rectified Output Current @T_L= 100°C

(Note 1)

6. 0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

100

FSM

120

Forward Voltage

@I_F= 6A

0.70

0.80

0.85

0.92

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.1

I^RM

350

280

°C/W

°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

200

3.0

R^ꢀ

3.5

T^j, T^STG

-55 to +150

-55 to +175

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

www.senocn.com

MBRF640– MBRF6200

1 of 2

Alldatasheet

中文翻译

下载PDF

与MBRF4040CT相关器件

型号	品牌	获取价格	描述	数据表
MBRF4045CT	GOOD-ARK	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, TO-220AB, TO-220F
MBRF4045CT	SENO	获取价格	40.0A SCHOTTKY BARRIER DIODE
MBRF4045CTR	THINKISEMI	获取价格	40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF4050CT	SENO	获取价格	40.0A SCHOTTKY BARRIER DIODE
MBRF4050CTR	THINKISEMI	获取价格	40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF4060CT	SENO	获取价格	40.0A SCHOTTKY BARRIER DIODE
MBRF4060CTR	THINKISEMI	获取价格	40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF4080CT	SMC	获取价格	SCHOTTKY RECTIFIER
MBRF4080CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, Silicon, TO-220AB, GREEN, PLASTIC, ITO
MBRF4080CTL	ETC	获取价格	DIODE SCHOTTKY 80V ITO220AB

与MBRF4040CT相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

3
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

3
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF4040CT

MBRF4040CT 数据手册

与MBRF4040CT相关器件

与MBRF4040CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF4040CT

MBRF4040CT 数据手册

与MBRF4040CT相关器件

与MBRF4040CT相关文章

您还可以找

您在本页遇到什么问题？