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MBRF2535CT-BP PDF预览

MBRF2535CT-BP

更新时间: 2024-11-06 14:53:11
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 121K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBRF2535CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ITO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:35 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRF2535CT-BP 数据手册

 浏览型号MBRF2535CT-BP的Datasheet PDF文件第2页 
MBRF2535CT  
THRU  
MBRF2560CT  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
30 Amp Schottky  
Barrier Rectifier  
35 to 60 Volts  
·
·
·
·
·
Plastic material used carries Underwriters Laboratory Classifications 94v-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High surge capability  
For use in low voltage, high frequency inverters, free wheeling, and polarity  
protection applications  
·
·
Guardring for overvoltage protection  
High temperature soldering guaranteed: 250 C/10 seconds,0.25from case  
o
ITO-220AB  
A
M
N
Maximum Ratings  
·
·
·
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance: 4.5oC/W junction to Case  
For capacitive load. Derate current by 20%  
C
K
Maximum  
Maximum  
Maximum DC  
Blocking  
D
E
MCC  
Part Number  
Recurrent  
RMS  
Voltage  
Peak Reverse  
Voltage  
Voltage  
35V  
45V  
MBRF2535CT  
MBRF2545CT  
MBRF2550CT  
MBRF2560CT  
24.5V  
31.5V  
35V  
35V  
45V  
50V  
60V  
F
P
50V  
J
60V  
42V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Aver age Forward  
Rectified Current  
Peak Forward Surge  
Current  
H
I
30A  
TA = 130°C  
(AV)  
Q
G
I
150A  
8.3ms, half sine  
FSM  
Maximum Instantaneous  
Forward Voltage  
MBRF2535CT-2545CT  
MBRF2550CT-2560CT  
MBRF2535CT-2545CT  
MBRF2550CT-2560CT  
0.82V  
0.75V  
0.73V  
0.65V  
I
FM = 30A; T = 25°C  
C
VF  
IF=15A, Tc=25°C  
DIMENSIONS  
IFM = 30A; T = 125°C  
C
INCHES  
MM  
DIM  
NOTE  
MIN  
.388  
MAX  
MIN  
9.85  
MAX  
IF=15A, Tc=125°C  
A
B
C
D
E
F
G
H
J
K
M
N
P
Q
.407  
10.35  
3.55  
2.83  
15.5  
13.2  
4.25  
2.57  
.73  
.128  
.101  
.570  
.496  
.148  
.096  
.019  
.046  
.266  
.165  
.110  
.097  
.019  
.145  
.111  
.610  
.520  
.167  
.101  
.029  
.056  
.285  
.190  
.130  
.107  
.029  
3.25  
2.57  
14.9  
12.6  
3.75  
2.44  
.47  
1.17  
6.75  
4.25  
2.81  
2.72  
.47  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
MBRF2535CT-2545CT  
MBRF2550CT-2560CT  
MBRF2535CT-2545CT  
MBRF2550CT-2560CT  
IR  
0.2mA  
1.0mA  
40mA  
50mA  
TC = 25°C  
1.43  
7.25  
4.75  
3.31  
2.48  
.73  
TC = 125°C  
Typical Junction  
Capacitance  
Meas ured at 1.0MHz,  
VR=4.0V  
CJ  
1000pF  
Note: 300 us pulse width, 1% duty cycle  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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