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MBRF2545CT-Y PDF预览

MBRF2545CT-Y

更新时间： 2024-11-22 01:10:43
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页数 文件大小 规格书
4页 228K
描述
Dual Common Cathode Schottky Rectifier

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MBRF2545CT-Y 数据手册

 浏览型号MBRF2545CT-Y的Datasheet PDF文件第2页浏览型号MBRF2545CT-Y的Datasheet PDF文件第3页浏览型号MBRF2545CT-Y的Datasheet PDF文件第4页 
MBRF2545CT-Y thru MBRF25150CT-Y  
Taiwan Semiconductor  
CREAT BY ART  
Dual Common Cathode Schottky Rectifier  
FEATURES  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
ITO-220AB  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs maximum  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
MBRF  
2545  
CT-Y  
MBRF  
2560  
CT-Y  
MBRF  
25100  
CT-Y  
MBRF  
25150  
CT-Y  
PARAMETER  
SYMBOL  
UNIT  
MBRF25  
45CT  
MBRF25  
60CT  
MBRF25  
100CT  
MBRF25  
150CT  
Marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
31  
45  
60  
42  
60  
100  
70  
150  
105  
150  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
25  
25  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
Maximum instantaneous forward voltage (Note 1)  
IF=12.5A, TJ=25℃  
-
0.75  
0.85  
0.75  
0.92  
0.88  
0.95  
0.92  
1.02  
0.98  
IF=12.5A, TJ=125℃  
VF  
V
-
0.65  
IF=25A, TJ=25℃  
0.82  
0.73  
-
-
IF=25A, TJ=125℃  
2
0.1  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
IR  
mA  
15  
10  
7.5  
5
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
V/μs  
RθjC  
RθjA  
1
8
OC/W  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1405048  
Version: A14  
1234

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