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MBRF2560CT-HE3/45 PDF预览

MBRF2560CT-HE3/45

更新时间： 2024-11-18 20:50:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 130K
描述
DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

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MBRF2560CT-HE3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-220AB
包装说明：ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.76
Base Number Matches：1

MBRF2560CT-HE3/45 数据手册

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MBR(F,B)2535CT thru MBR(F,B)2560CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
1
MBR25xxCT  
MBRF25xxCT  
PIN 1  
PIN 2  
CASE  
• Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB  
package)  
PIN 1  
PIN 2  
PIN 3  
PIN 3  
• Complant to RoHS 2002/95/EC and in accordance to  
WEEE 2002/96/EC  
TO-263AB  
K
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
1
MBRB25xxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class 1A  
whisker test, HE3 suffix for high reliability grade (AEC-Q101  
qualified), meets JESD 201 class 2 whisker test  
IF(AV)  
2 x 12.5 A  
VRRM  
IFSM  
35 V to 60 V  
150 A  
VF  
0.73 V at 30 A, 0.65 V at 15 A  
150 °C  
Polarity: As marked  
TJ max.  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
A
total device  
per diode  
25  
Maximum average forward rectified current  
at TC = 130 °C  
IF(AV)  
12.5  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
IRRM  
ERSM  
150  
A
Peak repetitive reverse surge current per diode  
at tp = 2 μs, 1 kHz  
1.0  
0.5  
Peak non-repetitive reverse energy (8/20 μs waveform)  
per diode  
25  
mJ  
Electrostatic discharge capacitor voltage human body  
model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
kV  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
Document Number: 88675  
Revision: 15-Jun-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
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