5秒后页面跳转
MBRD640CT-TP PDF预览

MBRD640CT-TP

更新时间: 2024-11-27 19:52:27
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 422K
描述
Rectifier Diode,

MBRD640CT-TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DPAK-3/2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.76
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.54 V
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:78 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:40 V
最大反向电流:100 µA表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

MBRD640CT-TP 数据手册

 浏览型号MBRD640CT-TP的Datasheet PDF文件第2页浏览型号MBRD640CT-TP的Datasheet PDF文件第3页浏览型号MBRD640CT-TP的Datasheet PDF文件第4页 
M C C  
MBRD620CT  
THRU  
MBRD660CT  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
6 Amp Schottky  
Barrier Rectifier  
20 to 60 Volts  
Extremely Fast Switching  
Extremely Low Forward Drop.  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
Operating Temperature:- 65to +150℃  
Storage Temperature: -65to +175℃  
Maximum Thermal Resistance (Per Leg):  
DPACK  
S
6/W Junction To Case  
80/W Junction To Ambient  
V
A
Maximum  
Recurrent Maximu  
Peak  
Reverse  
Voltage  
20V  
1
Maximum  
G
MCC  
Part Number  
Device  
Marking  
DC  
Blocking  
Voltage  
2
3
4
F
B
m RMS  
Voltage  
D
MBRD620CT MBRD620CT  
MBRD630CT MBRD630CT  
MBRD640CT MBRD640CT  
MBRD650CT MBRD650CT  
MBRD660CT MBRD660CT  
14V  
21V  
28V  
35V  
42V  
20V  
30V  
40V  
50V  
60V  
30V  
40V  
50V  
60V  
C
E
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
K
Average Forward  
Current (TC = 100)  
3.0A  
6.0A  
Per Diode  
Per Device  
1
IF(AV)  
2 , 4  
Peak Forward Surge  
Current  
3
IFSM  
75A  
8.3ms, half sine  
DIMENSIONS  
I
FM = 3.0A; TC = 25℃  
.70V  
.65V  
.90V  
.85V  
INCHES  
MM  
Maximum  
Instantaneous  
Forward Voltage*  
IFM = 3.0A; TC =1 25℃  
IFM =6.0A; TC = 25℃  
FM = 6.0A; TC =1 25℃  
DIM  
A
B
C
D
E
F
G
J
K
S
MIN  
MAX  
MIN  
5.97  
5.21  
2.19  
0.64  
0.99  
6.35  
MAX  
6.22  
5.46  
2.38  
0.89  
1.14  
6.73  
NOTE  
VF  
0.235  
0.205  
0.086  
0.025  
0.035  
0.250  
0.245  
0.215  
0.094  
0.035  
0.045  
0.265  
I
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
TA = 25℃  
TA = 125℃  
.1mA  
15mA  
0.090  
2.28  
IR  
0.018  
0.020  
0.370  
0.035  
0.023  
---  
0.410  
0.050  
0.48  
0.51  
9.40  
0.88  
0.58  
---  
10.42  
1.27  
V
Peak Repetitive  
Forward Current,  
TC=130, per diode  
Rated VR, Square  
Wave, 20 KHz  
IFRM  
6A  
1A  
Peak Repetitive  
Reverse Surge  
Current  
IRRM  
2μs, 1 KHz  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: 2  
2006/05/06  
1 of 4  

与MBRD640CT-TP相关器件

型号 品牌 获取价格 描述 数据表
MBRD645CT BL Galaxy Electrical

获取价格

6A,45V,Schottky Barrier Rectifiers
MBRD650CT SENSITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 50V V(RRM), Silicon, TO-250AA, SIMILAR
MBRD650CT MOTOROLA

获取价格

SWITCHMODE⑩ Power Rectifirers DPAK Surface Mo
MBRD650CT ONSEMI

获取价格

SWITCHMODE Power Rectifiers
MBRD650CT INFINEON

获取价格

SCHOTTKY RECTIFIER 6 Amp
MBRD650CT MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 50V V(RRM), Silicon, PLASTIC, DPAK-3
MBRD650CT WON-TOP

获取价格

SMD
MBRD650CTG ONSEMI

获取价格

SWITCHMODE Power Rectifiers
MBRD650CT-G SENSITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, Silicon, TO-250AA, SIMILAR TO TO-250AA,
MBRD650CT-GT4 SENSITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, Silicon, TO-250AA, SIMILAR TO TO-250AA,