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MBRD650CTPBF_11 PDF预览

MBRD650CTPBF_11

更新时间: 2024-01-27 08:29:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 139K
描述
Schottky Rectifier, 2 x 3 A

MBRD650CTPBF_11 数据手册

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VS-MBRD650CTPbF, VS-MBRD660CTPbF  
Vishay Semiconductors  
Schottky Rectifier, 2 x 3 A  
FEATURES  
• Popular D-PAK outline  
Base  
common  
cathode  
4
• Center tap configuration  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
2
Common  
cathode  
• Guard ring for enhanced ruggedness and long term  
reliability  
D-PAK (TO-252AA)  
1
3
Anode  
Anode  
• Compliant to RoHS Directive 2002/95/EC  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
2 x 3 A  
IF(AV)  
DESCRIPTION  
VR  
50 V, 60 V  
0.65 V  
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface  
mount, center tap, Schottky rectifier series has been  
designed for applications requiring low forward drop and  
small foot prints on PC boards. Typical applications are in  
disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
VF at IF  
IRM  
15 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
6
UNITS  
Rectangular waveform  
A
V
50/60  
490  
tp = 5 μs sine  
A
VF  
3 Apk, TJ = 125 °C (per leg)  
Range  
0.65  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBRD650CTPbF VS-MBRD660CTPbF  
UNITS  
Maximum DC reverse voltage  
VR  
50  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
3.0  
IF(AV)  
50 % duty cycle at TC = 128 °C, rectangular waveform  
per device  
6
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
490  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 12 mH  
75  
V
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
6
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.6  
Document Number: 94314  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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