Datasheet > MBRD650CTP

MBRD650CTP

更新时间： 2024-11-25 09:27:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	422K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 50V V(RRM), Silicon, PLASTIC, DPAK-3

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数据手册

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MBRD650CTP 数据手册

M C C

MBRD620CT

THRU

MBRD660CT

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

6 Amp Schottky

Barrier Rectifier

20 to 60 Volts

•

Extremely Fast Switching

Extremely Low Forward Drop.

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

•

Operating Temperature:- 65℃ to +150℃

Storage Temperature: -65℃ to +175℃

Maximum Thermal Resistance (Per Leg):

DPACK

6℃/W Junction To Case

80℃/W Junction To Ambient

Maximum

Recurrent Maximu

Peak

Reverse

Voltage

20V

Maximum

MCC

Part Number

Device

Marking

Blocking

Voltage

m RMS

Voltage

MBRD620CT MBRD620CT

MBRD630CT MBRD630CT

MBRD640CT MBRD640CT

MBRD650CT MBRD650CT

MBRD660CT MBRD660CT

14V

21V

28V

35V

42V

20V

30V

40V

50V

60V

30V

40V

50V

60V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current (T_C= 100℃)

3.0A

6.0A

Per Diode

Per Device

I_F(AV)

2 , 4

Peak Forward Surge

Current

I_FSM

75A

8.3ms, half sine

DIMENSIONS

_FM= 3.0A; T_C= 25℃

.70V

.65V

.90V

.85V

INCHES

Maximum

Instantaneous

Forward Voltage*

I_FM= 3.0A; T_C=1 25℃

I_FM=6.0A; T_C= 25℃

_FM= 6.0A; T_C=1 25℃

DIM

MIN

MAX

MIN

5.97

5.21

2.19

0.64

0.99

6.35

MAX

6.22

5.46

2.38

0.89

1.14

6.73

NOTE

V_F

0.235

0.205

0.086

0.025

0.035

0.250

0.245

0.215

0.094

0.035

0.045

0.265

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

T_A= 25℃

T_A= 125℃

.1mA

15mA

0.090

2.28

I_R

0.018

0.020

0.370

0.035

0.023

---

0.410

0.050

0.48

0.51

9.40

0.88

0.58

---

10.42

1.27

Peak Repetitive

Forward Current,

T_C=130℃, per diode

SUGGESTED SOLDER PAD LAYOUT

Rated V_R, Square

Wave, 20 KHz

I_FRM

Peak Repetitive

Reverse Surge

Current

I_RRM

2μs, 1 KHz

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

www.mccsemi.com

Revision: 2

2006/05/06

1 of 4

12 3 4

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