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MBRB2060CTT4 PDF预览

MBRB2060CTT4

更新时间: 2024-11-20 11:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关局域网
页数 文件大小 规格书
5页 130K
描述
SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package

MBRB2060CTT4 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-263包装说明:PLASTIC, CASE 418B-04, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.41Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PSFM-G2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):235认证状态:Not Qualified
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

MBRB2060CTT4 数据手册

 浏览型号MBRB2060CTT4的Datasheet PDF文件第2页浏览型号MBRB2060CTT4的Datasheet PDF文件第3页浏览型号MBRB2060CTT4的Datasheet PDF文件第4页浏览型号MBRB2060CTT4的Datasheet PDF文件第5页 
MBRB2060CT, MBR2060CT  
SWITCHMODEt  
Power Rectifiers  
TO220/D2PAK Surface Mount Power  
Package  
These stateoftheart devices employ the use of the Schottky  
Barrier principle with a platinum barrier metal.  
http://onsemi.com  
Features  
2
SCHOTTKY BARRIER  
RECTIFIERS  
20 AMPERES, 60 VOLTS  
Package Designed for Power Surface Mount Applications (D PAK)  
2
CenterTap Configuration (D PAK)  
Guardring for Stress Protection  
Low Forward Voltage  
175°C Operating Junction Temperature  
Epoxy Meets UL 94 V0 @ 0.125 in  
1
4
3
2
Short Heat Sink Tab Manufactured Not Sheared (D PAK)  
Similar in Size to Industry Standard TO220 Package  
PbFree Packages are Available  
4
Mechanical Characteristics:  
Case: Epoxy, Molded, Epoxy Meets UL 94 V0  
2
Weight: 1.7 Grams (Approximately) D PAK,  
4
1.9 Grams (Approximately) TO220  
Finish: All External Surfaces Corrosion Resistant and Terminal  
1
Leads are Readily Solderable  
3
Lead and Mounting Surface Temperature for Soldering Purposes:  
1
2
2
260°C Max. for 10 Seconds (D PAK)  
3
2
2
Device Meets MSL1 Requirements (D PAK)  
TO220AB  
CASE 221A  
STYLE 6  
D PAK  
CASE 418B  
STYLE 3  
ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MAXIMUM RATINGS (Per Leg)  
MARKING DIAGRAMS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
60  
V
RRM  
RWM  
R
V
V
AY WW  
Average Rectified Forward Current  
I
10  
20  
A
A
F(AV)  
B2060G  
AKA  
(Rated V , T = 110°C) Total Device  
AY WW  
B2060G  
AKA  
R
C
Peak Repetitive Forward Current  
I
20  
150  
0.5  
FRM  
(Rated V , Square Wave,  
R
20 kHz, T = 100°C)  
C
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
A
A
FSM  
RRM  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Peak Repetitive Reverse Surge Current  
(2.0 ms, 1.0 kHz)  
I
B2060 = Device Code  
G
AKA  
= PbFree Package  
= Diode Polarity  
Storage Temperature Range  
T
65 to +175  
65 to +175  
10,000  
°C  
°C  
stg  
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The heat generated must be less than the thermal conductivity from  
JunctiontoAmbient: dP /dT < 1/R .  
q
JA  
D
J
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
September, 2009 Rev. 8  
MBRB2060CT/D  
 

MBRB2060CTT4 替代型号

型号 品牌 替代类型 描述 数据表
MBRB2060CTT4G ONSEMI

完全替代

SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package

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