Datasheet > MBRB20100CT-M3

MBRB20100CT-M3

更新时间： 2024-11-24 01:18:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	90K
描述
Lower power losses, high efficiency

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中文翻译

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数据手册

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MBRB20100CT-M3 数据手册

MBRB2090CT-M3, MBRB20100CT-M3

www.vishay.com

Vishay General Semiconductor

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-263AB

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

MBRB2090CT

MBRB20100CT

PIN 1

TYPICAL APPLICATIONS

PIN 2

HEATSINK

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, or

polarity protection application.

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 10 A

90 V, 100 V

150 A

MECHANICAL DATA

I_F(AV)

Case: TO-263AB

V_RRM

I_FSM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

commercial grade

- halogen-free, RoHS-compliant, and

V_F

0.65 V

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Diode variation

Common cathode

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBRB2090CT MBRB20100CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

100

V_RWM

V_DC

Maximum DC blocking voltage

total device

Maximum average forward rectified current at T_C= 133 °C

per diode

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave superimposed on

rated load per diode

150

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

MAX.

0.80

0.65

0.75

100

UNIT

I_F= 10 A

T_C= 25 °C

T_C= 125 °C

T_J= 25 °C

T_J= 125 °C

Maximum instantaneous forward voltage 

I_F= 10 A

I_F= 20 A

V_F

per diode ⁽¹⁾

μA

Maximum reverse current per diode at

working peak reverse voltage ⁽²⁾

I_R

6.0

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 15-May-13

Document Number: 87980

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与MBRB20100CT-M3相关器件

型号	品牌	获取价格	描述	数据表
MBRB20100CTP	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CTPBF	KERSEMI	获取价格	SCHOTTKY RECTIFIER
MBRB20100CTPBF	VISHAY	获取价格	Dual High-Voltage Schottky Rectifiers
MBRB20100CTQ	MCC	获取价格	Tape:800pcs/Reel,8K/Ctn.;
MBRB20100CTQ	YANGJIE	获取价格	TO-263
MBRB20100CTS	YANGJIE	获取价格	TO-263
MBRB20100CTSTRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, SMD-220, 3 PIN
MBRB20100CTT4	ONSEMI	获取价格	SWITCHMODE⑩ Power Rectifier D2PAK Surface Mou
MBRB20100CTT4	MOTOROLA	获取价格	10A, 100V, SILICON, RECTIFIER DIODE
MBRB20100CT-T4	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, PLASTIC, D2PAK-3

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