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MBRB20100CTTRL PDF预览

MBRB20100CTTRL

更新时间: 2024-11-23 11:11:35
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 132K
描述
Schottky Rectifier, 2 x 10 A

MBRB20100CTTRL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.1Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBRB20100CTTRL 数据手册

 浏览型号MBRB20100CTTRL的Datasheet PDF文件第2页浏览型号MBRB20100CTTRL的Datasheet PDF文件第3页浏览型号MBRB20100CTTRL的Datasheet PDF文件第4页浏览型号MBRB20100CTTRL的Datasheet PDF文件第5页浏览型号MBRB20100CTTRL的Datasheet PDF文件第6页 
MBRB20..CT/MBR20..CT-1  
Vishay High Power Products  
Schottky Rectifier, 2 x 10 A  
FEATURES  
MBR20..CT-1  
MBRB20..CT  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
Base  
Base  
common  
cathode  
common  
cathode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified for Q101 level  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
DESCRIPTION  
Anode  
Anode  
Anode  
Anode  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
2 x 10 A  
VR  
80 to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 133 °C (per leg)  
VALUES  
20  
UNITS  
A
20  
VRRM  
IFSM  
80 to 100  
850  
V
A
tp = 5 µs sine  
10 Apk, TJ = 125 °C  
Range  
VF  
0.70  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
MBRB2080CT  
MBR2080CT-1  
MBRB2090CT  
MBR2090CT-1  
MBRB20100CT  
MBR20100CT-1  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 133 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 133 °C  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
5 µs sine or 3 µs rect.  
pulse  
Following any rated load ondition  
and with rated VRRM applied  
A
850  
150  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 µs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Document Number: 93444  
Revision: 21-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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