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MBRB20100CTT4 PDF预览

MBRB20100CTT4

更新时间： 2024-11-26 04:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
4页 62K
描述
SWITCHMODE⑩ Power Rectifier D2PAK Surface Mount Power Package

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中文翻译

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MBRB20100CTT4 技术参数

是否无铅：含铅生命周期：End Of Life
零件包装代码：TO-263包装说明：R-PSSO-G2
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.15Is Samacsys：N
应用：POWER外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.95 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：2最高工作温度：175 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240认证状态：Not Qualified
最大重复峰值反向电压：100 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
Base Number Matches：1

MBRB20100CTT4 数据手册

 浏览型号MBRB20100CTT4的Datasheet PDF文件第2页浏览型号MBRB20100CTT4的Datasheet PDF文件第3页浏览型号MBRB20100CTT4的Datasheet PDF文件第4页 
MBRB20100CT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
D2PAK Surface Mount Power Package  
2
The D PAK Power Rectifier is a state−of−the−art device that  
employs the use of the Schottky Barrier principle with a platinum  
barrier metal.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIER  
• Package Designed for Power Surface Mount Applications  
• Center−Tap Configuration  
• Guardring for Stress Protection  
• Low Forward Voltage  
20 AMPERES  
100 VOLTS  
• 175°C Operating Junction Temperature  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Short Heat Sink Tab Manufactured − Not Sheared!  
• Similar in Size to Industry Standard TO−220 Package  
• Pb−Free Packages are Available  
1
4
3
Mechanical Characteristics  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
2
4
D PAK  
CASE 418B  
STYLE 3  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
1
3
• Device Meets MSL1 Requirements  
• ESD Ratings: Machine Model, C >400 V  
Human Body Model, 3B >8000 V  
MARKING DIAGRAM  
MAXIMUM RATINGS (Per Leg)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
100  
V
RRM  
RWM  
AY WW  
B20100G  
AKA  
R
Average Rectified Forward Current  
I
10  
20  
A
A
A
F(AV)  
(Rated V , T = 110°C) Total Device  
R
C
Peak Repetitive Forward Current (Rated  
V , Square Wave, 20 kHz, T = 100°C)  
I
20  
FRM  
R
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
150  
FSM  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
Peak Repetitive Reverse Surge Current  
I
0.5  
A
RRM  
B20100 = Device Code  
(2.0 ms, 1.0 kHz)  
G
AKA  
= Pb−Free Package  
= Diode Polarity  
Storage Temperature Range  
T
−65 to +175  
−65 to +175  
10,000  
°C  
°C  
stg  
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 6  
MBRB20100CT/D  
 
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中文翻译

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