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MBRB1635TRLPBF PDF预览

MBRB1635TRLPBF

更新时间: 2024-09-16 11:11:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 143K
描述
Schottky Rectifier, 16 A

MBRB1635TRLPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.37其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:1800 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRB1635TRLPBF 数据手册

 浏览型号MBRB1635TRLPBF的Datasheet PDF文件第2页浏览型号MBRB1635TRLPBF的Datasheet PDF文件第3页浏览型号MBRB1635TRLPBF的Datasheet PDF文件第4页浏览型号MBRB1635TRLPBF的Datasheet PDF文件第5页浏览型号MBRB1635TRLPBF的Datasheet PDF文件第6页浏览型号MBRB1635TRLPBF的Datasheet PDF文件第7页 
VS-MBRB1635PbF, VS-MBRB1645PbF  
Vishay Semiconductors  
Schottky Rectifier, 16 A  
FEATURES  
• 150 °C TJ operation  
• High frequency operation  
• Low forward voltage drop  
Base  
cathode  
2
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
3
1
D2PAK  
Anode  
N/C  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
DESCRIPTION  
IF(AV)  
16 A  
This VS-MBRB16... Schottky rectifier has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VR  
35 V/45 V  
IRM  
40 mA at 125 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
35/45  
tp = 5 μs sine  
1800  
A
VF  
16 Apk, TJ = 125 °C  
0.57  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBRB1635PbF  
VS-MBRB1645PbF  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 134 °C, rated VR  
16  
Following any rated  
5 μs sine or 3 μs rect. pulse load condition and with  
rated VRRM applied  
1800  
A
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load condition halfwave  
single phase 60 Hz  
150  
24  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.6  
Document Number: 94304  
Revision: 23-Jun-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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