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MBRB1630CT-BP-HF PDF预览

MBRB1630CT-BP-HF

更新时间: 2024-11-01 19:50:03
品牌 Logo 应用领域
美微科 - MCC 功效瞄准线测试二极管
页数 文件大小 规格书
3页 621K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 30V V(RRM), Silicon, D2PACK-3/2

MBRB1630CT-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72其他特性:LOW POWER LOSS
应用:EFFICIENCY最小击穿电压:30 V
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:30 V最大反向电流:100 µA
反向测试电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRB1630CT-BP-HF 数据手册

 浏览型号MBRB1630CT-BP-HF的Datasheet PDF文件第2页浏览型号MBRB1630CT-BP-HF的Datasheet PDF文件第3页 
M C C  
MBRB1620CT  
THRU  
MBRB1660CT  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
16 Amp  
Schottky  
Barrier Rectifier  
20 to 60 Volts  
Compliant. See ordering information)  
Metal of Silicon Rectifier, Majority Conducton  
Guard ring for transient protection  
Low Forward Voltage Drop  
High Current Capability, High Efficiency  
Low Power Loss  
·
·
Moisture Sensitivity Level 1  
Meatl of Silicon Rectifier, Majority Conducton  
Halogen free available upon request by adding suffix "-HF"  
D2-PACK  
Maximum Ratings  
S
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
V
A
MCC  
Catalog  
Number  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
20V  
Maximum Maximum  
1
2
3
G
RMS  
Voltage  
DC  
Blocking  
Voltage  
20V  
B
4
MBRB1620CT  
MBRB1630CT  
MBRB1635CT  
MBRB1640CT  
MBRB1645CT  
MBRB1660CT  
14V  
D
30V  
35V  
40V  
45V  
21V  
30V  
24.5V  
28V  
35V  
40V  
C
H
31.5V  
42V  
45V  
60V  
E
60V  
J
K
Electrical Characteristics @ 25°C Unless Otherwise Specified  
1
2 , 4  
HEATSINK  
Average Forward  
Current  
IF(AV)  
16A  
TC = 90°C  
3
DIMENSIONS  
INCHES  
MM  
DIM  
NOTE  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
MIN  
.320  
.380  
.160  
.020  
.045  
.095  
.096  
.014  
.090  
.575  
.045  
MAX  
MIN  
8.13  
9.65  
4.06  
0.51  
1.14  
2.41  
2.43  
0.35  
2.29  
14.60  
1.14  
MAX  
9.14  
10.45  
4.83  
0.89  
1.40  
2.67  
3.03  
0.53  
2.79  
15.80  
1.40  
A
B
C
D
E
G
H
J
.359  
.411  
.190  
.035  
.055  
.105  
.120  
.021  
.110  
.625  
.055  
Maximum Forward  
Voltage Drop Per  
VF  
IFM = 8A  
.70V  
.80V  
.57V  
.70V  
1620CT-1645CT  
1660CT  
Element  
TJ = 25°C  
K
S
V
TJ = 125°C  
1620CT-1645CT  
1660CT  
SUGGESTED SOLDER PAD LAYOUT  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.740  
18.79  
.065  
Inches  
mm  
1.65  
TJ = 25°C  
0.1mA  
50mA  
IR  
CJ  
.420  
TJ = 100°C  
10.66  
.070  
1.78  
.120  
3.05  
Typical Junction  
.330  
8.38  
Capacitance  
1620CT-1645CT  
1660CT  
300pF Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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