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MBRB1635HE3/45 PDF预览

MBRB1635HE3/45

更新时间: 2024-11-05 22:57:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 97K
描述
DIODE SCHOTTKY 35V 16A TO263AB

MBRB1635HE3/45 数据手册

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MBRF16xx, MBRB16xx  
Vishay General Semiconductor  
www.vishay.com  
Schottky Barrier Rectifier  
FEATURES  
D2PAK (TO-263AB)  
ITO-220AC  
• Power pack  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
K
2
1
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (for D2PAK (TO-263AB) package)  
MBRF16xx  
MBRB16xx  
PIN 1  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for ITO-220AC package)  
K
PIN 1  
PIN 2  
HEATSINK  
PIN 2  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
VRRM  
IFSM  
35 V to 60 V  
150 A  
MECHANICAL DATA  
Case: ITO-220AC, D2PAK (TO-263AB)  
VF  
0.57 V, 0.65 V  
150 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
TJ max.  
Package  
Circuit configuration  
ITO-220AC, D2PAK (TO-263AB)  
Single  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: as marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBRB1635  
MBRB1645  
MBRB1660  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
35  
35  
35  
45  
45  
45  
16  
60  
60  
60  
VRWM  
VDC  
V
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 125 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
1.0  
0.5  
10 000  
V/μs  
°C  
Operating junction temperature range  
Storage temperature range  
-65 to +150  
-65 to +175  
TSTG  
Isolation voltage (ITO-220AC only) from terminal to heatsink  
t = 1 min  
VAC  
1500  
V
Revision: 26-Sep-2018  
Document Number: 88671  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

MBRB1635HE3/45 替代型号

型号 品牌 替代类型 描述 数据表
MBRB1635HE3/81 VISHAY

完全替代

DIODE 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB1635 VISHAY

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SCHOTTKY RECTIFIER

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